EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data

Abstract

After quenching of Au-doped FZ silicon an anisotropic axially symmetric E P R spectrum is observed. The spectrum exhibits a hyperfine interaction with x97Au nuclei ( I = f). In samples which were intentionally doped with isotopically enriched 5 T e ( I = f) an additional hyperfine interaction with this nucleus is observed. Due t o the large nuclear electric quadrupole moment of lg7Au the nuclear quadrupole interaction strongly influences the EPR spectrum. From this effect a lower limit for the quadrupole interaction can be derived by a computer diagonalization of the spin Hamiltonian. From the observed hyperfine interactions and the known properties of Fe and Au in silicon i t is concluded that this spectrum originates from a [AusFei] complex.

EPR of iron‐boron centres in silicon

“…Calling the C, centre axis z and taking it as axis of quantization, the spin Hamiltonian (SH) describing the electronic spin transitions may be written Ei -E 2 = ge&B 9 with the effective g-value Hence one obtains for the main directions B 11 C, and B 1 C,, respectively. As the parameters g i and 1 DI cannot be obtained simultaneously from (9) they must be determined by measurements of the resonance magnetic fields either at some other microwave frequency or intermediate orientations with high accuracy.…”

Low Temperature Interactions Between Gold and Iron in Silicon

“…The gold-iron pairs have been found to readily form during annealing treatments in the temperature range 120°C-250 0 C [1,2,3], and the most likely model for this process involves the thermal movement of mobile interstitial iron until it is trapped by a gold centre. The mechanism of pair formation is believed to result from Coulombic attraction between negatively charaed gold centres and positively charged iron.…”

The Interaction of Hydrogen with Deep Level Defects in Silicon

“…TM impurities have large covalent radii and, like H, readily react with dopants and other defects, as well as complexing with other TM centres [184,188,189,190,191,192,193]. They are readily attracted to aggregates of vacancies (micro-voids) and precipitate at stacking faults and along dislocations [194].…”