Equipotential distribution in the quantum Hall effect in GaAs-AlGaAs heterostructures

Sichel, E. K.; Knowles, M L; Sample, HH

doi:10.1088/0022-3719/19/28/020

Cited by 13 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In bulk GaN, most experimental measurements of the thermal conductivity have been done at temperature below 400 K. 71,72 Typical experimental values at room temperature are in the range of 130 -200 W/m·K; a good survey of the results prior to 2010 was done by AlShaikhi et al 73 Recent first-principles theoretical calculations by Lindsey et al 74 give thermal conductivity values for temperatures up to 500 K, with the room-temperature value of about 200 W/m·K, in agreement with experiment. 71,72 Based on a theoretical study by Liu and Balandin, 32 the thermal conductivity of bulk GaN at 1000 K is expected to be about 40 W/m·K. Thermal conductivity in n-type NWs comprises two components: phonon (lattice) and electron thermal conductivities.…”

Section: Thermal Transportmentioning

confidence: 99%

“…Here, B T N , B T U , B LN , and B LU are the constants shown in Table II, which are calculated by fitting our simulation results for bulk GaN to experimental results of Sichel et al 71 ω 1 corresponds to the frequency of the transverse branch at q max /2 point, where q max is the Brillouin zone boundary. 89 The relaxation rate for mass difference scattering is given by the following expression 91 where A i is a sample-dependent constant, given by…”

Section: Thermal Transportmentioning

confidence: 99%

See 1 more Smart Citation

Ultrathin GaN nanowires: Electronic, thermal, and thermoelectric properties

et al. 2014

View full text Add to dashboard Cite

We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3-9 nm), doping densities (10 18 -10 20 cm −3 ), and temperatures (300-1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrodinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature ZT of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so ZT increases with increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs. The ZT of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.

show abstract

Section: Thermal Transportmentioning

confidence: 99%

Section: Thermal Transportmentioning

confidence: 99%

Ultrathin GaN nanowires: Electronic, thermal, and thermoelectric properties

et al. 2014

View full text Add to dashboard Cite

show abstract

Quantum Transport in Semiconductor Nanostructures

Beenakker

Houten

1991

Solid State Physics

1,114

727

View full text Add to dashboard Cite

I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).Comment: 111 pages including 109 figures; this review from 1991 has retained much of its usefulness, but it was not yet available electronicall

show abstract