Equivalent circuit modeling of single and coupled on-chip interconnects on lossy silicon substrate

Zheng, Jiangtao; Hahm, Yeon-Chang; Weisshaar, A.; Tripathi, V.K.

doi:10.1109/epep.1999.819222

Cited by 10 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The equivalent-circuit model for the p.u.l. series impedance is derived by constructing a rational function with forced passivity from the computed frequency-dependent series impedance [16]. The approximating rational function has the general form (13) and can be synthesized in terms of ideal and elements in a ladder-type canonical topology [17]- [19] as shown in Fig.…”

Section: A Single Interconnectmentioning

confidence: 99%

“…series impedances are represented by lumped elements. Consider the differential voltages in the transmission line equations for two coupled lines (16) (17) where and are the voltages and currents on the two lines, respectively, and , are the p.u.l. self and mutual impedances.…”

Section: B General Asymmetric Coupled Interconnectsmentioning

confidence: 99%

“…self and mutual impedances. Introducing two auxiliary voltage sources, and , (16) and (17) can be written as (18) (19) Equations (18) and (19) lead to the equivalent-circuit representation for coupled interconnects shown in Fig. 9.…”

Section: B General Asymmetric Coupled Interconnectsmentioning

confidence: 99%

See 2 more Smart Citations

CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

Zheng

Hahm

Tripathi

et al. 2000

IEEE Trans. Microwave Theory Techn.

Self Cite

175

View full text Add to dashboard Cite

show abstract

Section: A Single Interconnectmentioning

confidence: 99%

Section: B General Asymmetric Coupled Interconnectsmentioning

confidence: 99%

See 1 more Smart Citation

CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

Zheng

Hahm

Tripathi

et al. 2000

IEEE Trans. Microwave Theory Techn.

Self Cite

175

View full text Add to dashboard Cite

show abstract

“…In [7,8], an equivalent circuit model with frequency-dependent components were described. A quasi-magnetostatic integral formulation approach was used for the computation of the component values.…”

Section: Introductionmentioning

confidence: 99%

A SPICE COMPATIBLE MODEL OF ON-WAFER COUPLED INTERCONNECTS FOR CMOS RFICs

Shi¹,

Yeo²,

Lim³

et al. 2010

PIER

View full text Add to dashboard Cite

Abstract-This paper investigates the properties of the on-wafer coupled interconnects built in a 0.18 µm CMOS technology for RF applications.A SPICE compatible equivalent circuit model is developed. The proposed model is an extension of a 2-Π equivalent circuit model for single-line interconnects by adding two coupling components. The model parameters are extracted from four-port S-parameter simulation results through a calibrated electromagnetic (EM) simulator, i.e., HFSS. The accuracy of the model is validated from 500 MHz to 20 GHz.

show abstract

“…the speed, area, reliability, and yield of next generation IC and MCM circuits [1]- [4], [6]- [8]. To avoid problems with the interconnection lines and thereby to increase the transmission bandwidth of sub-nanosecond digital signals through the interconnection lines, transmission line structures are required.…”

mentioning

confidence: 99%

Embedded microstrip interconnection lines for gigahertz digital circuits

Ryu

Baik

Kim

et al. 2000

IEEE Trans. Adv. Packag.

View full text Add to dashboard Cite

Transmission line structures are needed for the high-performance interconnection lines of GHz integrated circuits (IC's) and multichip modules (MCM's), to minimize undesired electromagnetic wave phenomena and, therefore, to maximize the transmission bandwidth of the interconnection lines. In addition, correct and simple models of the interconnection lines are required for the efficient design and analysis of the circuits containing the interconnection lines. In this paper, we present electrical comparisons of three transmission line structures: conventional metal-insulator-semiconductor (MIS) and the embedded microstrip structures embedded microstrip (EM) and inverted embedded microstrip (IEM). In addition, we propose closed-form expressions for the embedded microstrip structures EM and IEM and validate the expressions by comparing with empirical results based on -parameter measurements and subsequent microwave network analysis.Test devices were fabricated using a 1-poly and 3-metal 0.6 m Si process. The test devices contained the conventional MIS and the two embedded microstrip structures of different sizes. The embedded microstrip structures were shown to carry GHz digital signals with less loss and less dispersion than the conventional MIS line structures. -parameter measurements of the test devices showed that the embedded microstrip structures could support the quasi-TEM mode propagation at frequencies above 2 GHz. On the other hand, the conventional MIS structure showed slow-wave mode propagation up to 20 GHz. More than 3-dB/mm difference of signal attenuation was observed between the embedded microstrip structures and the conventional MIS structure at 20 GHz. Finally, analytical RLCG transmission line models were developed and shown to agree well with the empirical models deduced from -parameter measurements.

show abstract

Equivalent circuit modeling of single and coupled on-chip interconnects on lossy silicon substrate

Cited by 10 publications

References 6 publications

CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

A SPICE COMPATIBLE MODEL OF ON-WAFER COUPLED INTERCONNECTS FOR CMOS RFICs

Embedded microstrip interconnection lines for gigahertz digital circuits

Contact Info

Product

Resources

About