Er diffusion into gallium nitride

Chen, Chii Chang; Ting, Yi Sheng; Lee, Chien Chieh; Chung, Gou; Chakraborty, Purushottam; Chini, Tapas Kumar; Chuang, Hui Wen; Tsang, Jian Shihn; Kuo, Cheng Ta; Tsai, Wen Chung; Chen, Shu Han; Chyi, Jen Inn

doi:10.1016/s0038-1101(02)00407-0

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…Similar SF loop features are also found in plasma-assisted MBE grown GaN layers [33,34] and rare-earth implanted GaN layers [35]. Based on the experimental results on Er depth profiles in GaN thin layers through thermal diffusion, an activation energy barrier for diffusion been deduced to be 1 ± 0.4 eV [36,37]. The authors claim that such a low diffusion barrier is explainable by an interstitial-assisted mechanism.…”

Section: Discussionsupporting

confidence: 60%

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy

Trampert²

2013

Nanotechnology

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The detection of non-uniform magnetic element distribution and phase separation has been highly challenging in dilute magnetic semiconductor alloys. Here, we present a dedicated transmission electron microscopy (TEM) investigation of epitaxial GaN:Gd thin films and unambiguously identify the occurrence of nano-scale coherent GdN clusters. The films were grown by molecular beam epitaxy with Gd concentrations varying between 10(16) and 10(19) cm(-3). The TEM results revealed the presence of nano-scale, coherently strained platelets lying parallel to the (0001) basal planes of the wurtzite GaN matrix. The platelet-shaped clusters consist of GdN as verified by chemically sensitive Z-contrast scanning TEM imaging. The cluster dimension as well as the displacement of the distorted lattice along the [0001] direction are quantitatively determined by high-resolution TEM based on geometric phase analysis. Dynamic strain contrast calculations taking the measured displacement field as an input parameter attained an excellent agreement with the experimental diffraction contrast results, which enables an estimate of average cluster size and distance. The GdN platelet clusters are of two monolayer thickness with a base diameter of about 2 nm for samples with low Gd concentrations (10(16) cm(-3)) and about 4 nm for samples with high Gd concentrations (10(19) cm(-3)). A discussion about the local stress environment establishes that the GdN platelets are incorporated in a metastable wurtzite crystal phase.

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Section: Discussionsupporting

confidence: 60%

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy

Trampert²

2013

Nanotechnology

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“…Figure 1 shows the Nd concentration profile in the diffused samples after 15 hour annealing at 800°C. Ting et al performed SIMS measurements on GaErN via thermal diffusion in a furnace at 800°C under a flowing nitrogen atmosphere for 7.5-119 hours, and calculated the diffusion coefficient (at 800°C) of Er in GaN through an Arrhenius expression to be D = 2 ± 1.1 x 10 -17 cm 2 /s [4,5]. The diffusion depth was estimated to be ~16nm for the template grown with 3sccm silane, and ~32nm for the template grown with 1.5sccm silane.…”

Section: Resultsmentioning

confidence: 99%

Ferromagnetism and Near-infrared Luminescence in Neodymium and Erbium Doped Gallium Nitride via Diffusion

et al. 2009

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In this study, we report on the diffusion of neodymium (Nd) and erbium (Er) into n-type and undoped GaN and subsequent measurements of the room-temperature (RT) magnetic and optical properties. The diffusion profile has been measured via secondary ion mass spectroscopy (SIMS) with rare-earth (RE) concentration yields of up to 1x10 18 /cm 3 . The ferromagnetic properties were measured using an alternating gradient magnetometer (AGM) giving a saturation magnetization (Ms) of up to 3.17emu/cm 3 for the RE-diffused layer. The photoluminescence (PL) emission of the Nd-diffused and Er-diffused GaN is observable in the near-infrared (NIR) and infrared (IR) regions of the spectrum, respectively. The Nd-diffused GaN samples show NIR emission at 1064nm and 1350nm, while Er-diffused GaN samples have IR emission at 1546nm. This appears to be the first successful result of Nd diffusion doping into GaN crystals, and the first demonstration of above RT ferromagnetism involving GaN diffused with Nd. Details of our ferromagnetic and optical emission studies, related to the RE diffusion into GaN, are presented.

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“…The second possibility is to use so called "doping in situ" [14], [15]. The last method for the GaN layers doping by the RE ions is diffusion [16] though this method has limited use mainly due to a low diffusivity of the RE ions [17]. MOCVD provides a rather easy way how to fabricate the GaN layers though it has not yet allows for direct (in situ) doping with the RE ions, that must be incorporated by a successive ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Er³⁺+ Yb³⁺doped gallium nitride layers

Prajzler

Alves²,

Buchal

et al. 2006

SPIE Proceedings

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We report about properties of Gallium Nitride layers doped by Erbium and Erbium/Ytterbium ions. The GaN layers were fabricated by Metal Organic Chemical Vapor Deposition on sapphire substrate, and Er 3+ and Yb 3+ ions were incorporated into the deposited layers by using ion implantation. After the implantation the samples were annealed in nitrogen atmosphere. The structures of the GaN samples were examined by the X-Ray Diffraction analysis; composition of the samples was measured by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The GaN layers had single crystalline hexagonal wurtzite structure and content of Er 3+ and Er 3+ \Yb 3+ ranged from 0.05 to 3.38 at. %. The photoluminescence measurement was carried out at excitation of λ ex = 632.8 nm (temperature 4 K) and λ ex = 980 nm (room temperature). Photoluminescence spectra taken at 4 K showed typical erbium 4 I 13/2 → 4 I 15/2 emission bands. Some of our samples exhibited the desired emission even at the room temperature, which indicated that the samples were of a good quality what concerned their crystallographic homogeneity, as well as distribution and appropriate concentration of the Er 3+ and Yb 3+ .

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Er diffusion into gallium nitride

Cited by 3 publications

References 14 publications

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy

Ferromagnetism and Near-infrared Luminescence in Neodymium and Erbium Doped Gallium Nitride via Diffusion

Optical properties of Er³⁺+ Yb³⁺doped gallium nitride layers

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Er diffusion into gallium nitride

Cited by 3 publications

References 14 publications

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy

Ferromagnetism and Near-infrared Luminescence in Neodymium and Erbium Doped Gallium Nitride via Diffusion

Optical properties of Er3++ Yb3+doped gallium nitride layers

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Optical properties of Er³⁺+ Yb³⁺doped gallium nitride layers