The optimization of erbium-doped Ta 2 O 5 thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM~50 nm) centered at 1534 nm, corresponding to 4 I 13/2 -4 I 15/2 transition of Er 3+ ion. The samples were annealed up to 600 ƕ C and, both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.