Erratum: “A (23×213) surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy” [Appl. Phys. Lett. <b>75</b>, 650 (1999)]

Naitoh, Masamichi; Takami, J.; Nishigaki, S.

doi:10.1063/1.125119

Cited by 9 publications

(16 citation statements)

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“…On the other hand, periodic structures are formed by annealing SiC surfaces in ultra high vacuum (UHV), especially by annealing in a Si-rich environment to prevent the surface graphitization. Depending on polytypes, polarity and sample preparation procedures, various surface structures have been reported [3,[5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Observations of Graphitized SiC Surfaces by STM

Hisada

Mitsuoka

Mukainakano

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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Section: Introductionmentioning

confidence: 99%

Observations of Graphitized SiC Surfaces by STM

Hisada

Mitsuoka

Mukainakano

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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“…After a room-temperature wet cleaning, [21] the substrate was transferred to the chamber and was vacuum-chucked on the substrate heating stage made of SiC-coated graphite. The substrate surface was exposed to the plasma of gas mixtures containing the source gases (CH 4 , SiH 4 and CH 3 SiH 3 ) and dilution gases (He and H 2 ) at a constant process pressure of 760 Torr, and the central portion of the exposed area (30 × 10 mm 2 ), which is defined by the plasma length and the width of the substrate, was studied.…”

Section: Methodsmentioning

confidence: 99%

“…The VHF power was fixed at 300 W. The carbonized layer seems to grow in a diffusion-limited fashion and reaches a thickness of 7.3 nm after 60 min carbonization. In the case of conventional thermal carbonization using acetylene, which is easier to decompose than CH 4 , it has been reported that the carbonized layer thickness after 60 min carbonization at 800…”

Section: Carbonization Of Si Surfacesmentioning

confidence: 99%

“…[13] In our previous reports, we have studied the deposition of crystalline SiC on Si from gas mixtures containing helium (He), hydrogen (H 2 ) and source gases such as silane (SiH 4 ), methane (CH 4 ) and monomethylsilane (CH 3 SiH 3 ). [14 -16] It was shown that 3C-SiC films with polycrystalline columnar structure could be grown at relatively low substrate temperatures (T sub ) of 550-800…”

Section: Introductionmentioning

confidence: 99%

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Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

Kakiuchi

Ohmi

Aketa

et al. 2008

Surface & Interface Analysis

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The heteroepitaxial growth of cubic silicon carbide (3C-SiC) on Si(001) at a substrate temperature of 800• C was investigated using atmospheric-pressure plasma excited by very-high-frequency (VHF) power. The carbonization process of the Si surface was first studied using plasma of He, H 2 and CH 4 mixtures to suppress the undesired influences of the large lattice mismatch between Si and 3C-SiC. A (001)-oriented 3C-SiC layer, with thickness of approximately 3 nm and a root mean square roughness of 0.23 nm, was formed by supplying the optimum VHF power for a H 2 concentration of 10% (H 2 /CH 4 ratio of 40). Following the carbonization process, 3C-SiC films were deposited from a CH 3 SiH 3 single source or CH 4 and SiH 4 dual sources by varying the atomic concentration ratio (C/Si). The crystal quality of the deposited films was characterized using infrared absorption spectroscopy, transmission electron microscopy and selected-area electron diffraction. The results showed that increasing the C/Si ratio was essential to improve both the deposition rate and the crystal quality. The 3C-SiC film deposited at C/Si = 10 exhibited the (001) 3C-SiC growth epitaxially aligned to the Si matrix, although it included a high density of planar defects originating from twinned 3C-SiC.

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“…• surfaces owing to the desorption of Si atoms from the SiC surface with increasing annealing temperature [4][5][6]. During oxidation of the (3 × 3) reconstructed surface on the Si predeposited 6H-SiC(0001) surface, oxidation layers were formed at low temperature (500…”

Section: Introductionmentioning

confidence: 99%

Oxidation at Cs Pre-Adsorbed Si/6H-SiC(0001)-(3 × 3) Reconstructed Surfaces Studied Using Metastable-Induced Electron Spectroscopy

Ikari

Nakamura

Hirayama

et al. 2016

e-J. Surf. Sci. Nanotech.

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A Si-covered 6H-SiC(0001) surface was transformed from a Si-rich to C-rich one with increasing annealing temperature. An alkali metal is well known for promoting oxidation. We studied the oxidation to Cs pre-adsorption on a 6H-SiC(0001)-(3×3) reconstructed surface using metastable-induced electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), and low-energy electron diffraction (LEED). The (3 × 3) reconstructed surfaces was adsorbed Cs and exposed oxygen at room temperature. The MIES results show that the intensity of electron emission induced Cs6s increased with Cs evaporation. For the oxygen-exposed Cs/SiC surface, the emission intensity of the Cs6s-induced peak rapidly decreased and a dissociated adsorption oxygen-induced peak appeared. When the oxygen-adsorbed Cs/SiC(0001) surface was annealed until 800• C, Cs atoms were desorbed from the surface and O bonded with Si, forming SiO2.

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Erratum: “A (23×213) surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy” [Appl. Phys. Lett. 75, 650 (1999)]

Cited by 9 publications

References 0 publications

Observations of Graphitized SiC Surfaces by STM

Observations of Graphitized SiC Surfaces by STM

Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

Oxidation at Cs Pre-Adsorbed Si/6H-SiC(0001)-(3 × 3) Reconstructed Surfaces Studied Using Metastable-Induced Electron Spectroscopy

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Erratum: “A (23×213) surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy” [Appl. Phys. Lett. 75, 650 (1999)]

Cited by 9 publications

References 0 publications

Observations of Graphitized SiC Surfaces by STM

Observations of Graphitized SiC Surfaces by STM

Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

Oxidation at Cs Pre-Adsorbed Si/6H-SiC(0001)-(3 &times; 3) Reconstructed Surfaces Studied Using Metastable-Induced Electron Spectroscopy

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Oxidation at Cs Pre-Adsorbed Si/6H-SiC(0001)-(3 × 3) Reconstructed Surfaces Studied Using Metastable-Induced Electron Spectroscopy