Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. <b>113</b>, 133708 (2013)]

Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, Ryan B.; Bahrami-Yekta, Vahid; Masnadi-Shirazi, Mostafa; Beaton, Daniel A.; Tiedje, T.

doi:10.1063/1.4905390

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…Low growth temperatures are also known to extend the pseudomorphic limit by suppressing thermally-activated dislocation nucleation and glide. MOVPE growth at low temperatures also has complications, such as potentially high carbon impurity concentrations, formation of point defects, [23][24][25] and a potentially strong temperature dependence of the growth rate due to the surface-kinetic-limited growth behavior.…”

mentioning

confidence: 99%

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Guan

Forghani

Schulte

et al. 2016

ECS J. Solid State Sci. Technol.

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Metal-organic vapor phase epitaxy (MOVPE) of tensile-strained GaAs 1-y P y layers on GaAs substrates was carried out over the temperature range from 380 to 650 • C. The P content in the GaAs 1-y P y epitaxial layers initially decreases with decreasing growth temperature from 550 to 650 • C, while then exhibiting an increase with decreasing growth temperature from 550 to 380 • C. Thermodynamic calculations indicate that P incorporation is far from thermodynamic equilibrium at all growth temperatures. Related surface kinetics for the anion incorporation competition are discussed and it is suggested that the P incorporation is assisted by the increased P surface coverage at low growth temperatures. GaAs 1-y P y tensile strained layers with layer thickness exceeding the critical thickness exhibit an early stage of strain relaxation by the formation of cracks rather than misfit dislocations. GaAs 1-y P y ternary alloys have been used extensively in a variety of III-V semiconductor electronic and optoelectronic devices. With a direct bandgap ranging from 1.42 to 1.98 eV when 0 < y < 0.45, GaAs 1-y P y has been used as the active region of quantum well diode lasers emitting at 715-850 nm.1-4 The biaxial tensile strain created when GaAs 1-y P y is grown pseudomorphically on a GaAs substrate modifies the band structure and leads to improved laser diode performance and controlled polarization through the control of the magnitude of strain.1,2 Furthermore, when incorporated into structures utilizing In x Ga 1-x As, tensile-strained GaAs 1-y P y can compensate the compressive strain in the In x Ga 1-x As and provide carrier confinement through the band offsets. These heterostructure designs have led to its use in long wavelength device applications such as In x Ga 1-x As/GaAs 1-y P y /Al z Ga 1-z As quantum-cascade light-emitting structures,5 In x Ga 1-x As/GaAs 1-y P y /GaAs quantum-well diode lasers 6 and GaAs 1-y P y /In x Ga 1-x As strain-balanced quantum well solar cells.7GaAs 1-y P y is also not susceptible to kinetically driven composition modulations that have been observed in some other widely used semiconductor alloy systems, such as In x Ga 1-x As. Metal-organic vapor phase epitaxy (MOVPE) is a proven technology for the fabrication of multilayer thin film optoelectronic devices. Generally, MOVPE-based III-V compound semiconductor growth requires an excess of the group V component in the gas-phase, i.e. a gas phase V/III ratio greater than unity. The growth rate is determined by the group III, in this case, Ga, molar flow rate sent into the reactor. The excess anion concentration in the gas phase challenges the control over the solid composition for mixed anion alloys, because the incorporation behavior may not only be controlled by thermodynamic influences, but also by competing surface reactions for anion incorporation. 9As the only Ga-mixed anion alloy system which forms a complete solid solution across its phase diagram, 10 GaAs 1-y P y serves as a model system to investigate any CVD-based influences on the an...

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mentioning

confidence: 99%

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Guan

Forghani

Schulte

et al. 2016

ECS J. Solid State Sci. Technol.

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“…Low growth temperatures have been used to achieve Bi incorporation. The resulting material has been shown to contain a lower defect concentration than low temperature GaAs owing to the surfactant properties of Bi [27]. Bi clusters [28] and surface droplets [29] have been observed, and mechanisms of their formation and control proposed.…”

Section: Current Status and Challenges Of Gaas 1-x Bi Xmentioning

confidence: 99%

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Thomas

Mellor

Hylton

et al. 2015

Semicond. Sci. Technol.

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Abstract. Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triplejunction configuration or on top of Ge in a quad-junction configuration. GaAs 0.94 Bi 0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBi photodetector devices. The relatively high absorption coefficient of GaAsBi suggests sufficient current can be generated to match the sub-cell photocurrent from the other sub-cells of a standard multi-junction solar cell. However, minority carrier transport and background doping levels place constraints on both p/n and p-i-n diode configurations. In the possible case of short minority carrier diffusion lengths we recommend the use of a p-i-n diode, and predict the material parameters that are necessary to achieve high efficiencies in a GaInP/GaAs/GaAsBi/Ge quad-junction cell.

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Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

Gelczuk

Kopaczek

Rockett

et al. 2017

Sci Rep

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Deep-level defects in n-type GaAs1−xBix having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been studied by contactless electroreflectance and photoluminescence. We find that incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap concentration in dilute GaAsBi layers by over two orders of magnitude compared to GaAs grown under the same conditions. In order to distinguish between Bi- and host-related traps and to identify their possible origin, we used the GaAsBi band gap diagram to correlate their activation energies in samples with different Bi contents. This approach was recently successfully applied for the identification of electron traps in n-type GaAs1−xNx and assumes that the activation energy of electron traps decreases with the Bi (or N)-related downward shift of the conduction band. On the basis of this diagram and under the support of recent theoretical calculations, at least two Bi-related traps were revealed and associated with Bi pair defects, i.e. (VGa+BiGa)−/2− and (AsGa+BiGa)0/1−. In the present work it is shown that these defects also influence the photoluminescence properties of GaAsBi alloys.

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Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]

Cited by 6 publications

References 3 publications

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

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Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]

Cited by 6 publications

References 3 publications

Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

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Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures