Erratum: The thermal stability of thin layer transition and refractory metallizations on GaAs [J. Vac. Sci. Technol. 17, 904 (1980)]

Mukherjee, S.D.; Морган, Д.; Palmstrøm, Christopher J.; Smith, Joseph G.

doi:10.1116/1.570686

Cited by 7 publications

(9 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…At lower temperatures interdiffusion is no longer detectable in the RBS spectra after 2 h in a vacuum at 500°C [11] or 144 h in air at 355 °C [12]. After an additional 144 h at 400 °C [12] only the outer 25 nm of the initial 100 nm of W layer was oxidized to WO3 and no out-diffusion of Ga or As was observed.…”

Section: Thin-film M-gaas Diffusion Couplesmentioning

confidence: 89%

“…After an additional 144 h at 400 °C [12] only the outer 25 nm of the initial 100 nm of W layer was oxidized to WO3 and no out-diffusion of Ga or As was observed. Even after a 550 °C anneal in a flowing Nz-H 2 atmosphere no interdiffusion was detected but blisters formed on heating beyond 400 °C [123, presumably due to thermal expansion coefficient mismatch [13].…”

Section: Thin-film M-gaas Diffusion Couplesmentioning

confidence: 99%

See 1 more Smart Citation

Metallurgy of M-GaAs contacts (M=W, Re, Si)

Han

Schmid–Fetzer

1993

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Section: Thin-film M-gaas Diffusion Couplesmentioning

confidence: 89%

Section: Thin-film M-gaas Diffusion Couplesmentioning

confidence: 99%

Metallurgy of M-GaAs contacts (M=W, Re, Si)

Han

Schmid–Fetzer

1993

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

“…Refractory metals, especially W have been shown to form thermally stable Schottky contacts to n-GaAs up to annealing temperatures of 600°C [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Schottky barrier degradation of the W/GaAs system after high-temperature annealing

Cheung

Sands

et al. 1986

Journal of Applied Physics

View full text Add to dashboard Cite

W/GaAs diodes annealed at temperatures ranging from 100 to 900 °C were investigated with current voltage (I-V) and capacitance voltage (C-V) techniques, Rutherford backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. Improvements in the diode characteristics were observed after annealing at temperatures below 600 °C. Noticeable degradation in the rectifying behavior of the diodes occurred after annealing at temperatures >600 °C. Correlations between the electrical degradation and the interdiffusion of W and GaAs at the interface were found. Our results strongly suggest that the in-diffusion of W leads to the formation of a diffused, highly resistive region near the W/GaAs interface. The high resistance of this region is believed to be caused by the compensation of the substrate dopants by tungsten acceptors. Annealing the diodes at temperatures >850 °C resulted in reactions between W and GaAs. The W-GaAs reaction leads to islands of W2As3 at the W/GaAs interface, resulting in physical breakdown of the W/GaAs diode.

show abstract

“…In order to solve this problem, basic understanding of the metallurgy of various metal-GaAs interfaces is essential. Contact systerns such as Pt-GaAs [1][2][3], Pd-GaAs [3][4][5][6][7][8], Ni-GaAs [3,[9][10][11] and W-GaAs [1,[12][13][14][15] have been studied by many investigators. While most studies in this area have been concentrated on a few metal-GaAs systems, many other contact systems which may have great potential in technological applications have been neglected.…”

mentioning

confidence: 99%

Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

Cheung

Sands

et al. 1987

Journal of Applied Physics

View full text Add to dashboard Cite

The solid-state reactions between (100) GaAs substrates and Rh films ∼150 Å and ∼600 Å thick, annealed at temperatures between 300 and 800 °C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the Rh films and the GaAs substrate is observed at ∼300 °C. Laterally segregated RhGa, RhAs, and RhAs2 phases are detected for the 150-Å Rh/GaAs contact annealed in the temperature range of 300–700 °C. For thick Rh film (∼600 Å) on GaAs, vertical phase separation between the RhGa and the Rh-As phases is observed after annealing. After annealing at 700 °C for 20 min, the reaction between the 600-Å Rh film and GaAs is complete and a layer sequence of RhGa/RhAs2/GaAs results. Electrical properties of Rh/n-GaAs diodes are measured using the current voltage dependence. A correlation between the electrical behavior and the metallurgical reaction is observed.

show abstract

Erratum: The thermal stability of thin layer transition and refractory metallizations on GaAs [J. Vac. Sci. Technol. 17, 904 (1980)]

Cited by 7 publications

References 0 publications

Metallurgy of M-GaAs contacts (M=W, Re, Si)

Metallurgy of M-GaAs contacts (M=W, Re, Si)

Schottky barrier degradation of the W/GaAs system after high-temperature annealing

Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

Contact Info

Product

Resources

About