Estimation and control of power electronic device temperature during operation with variable conducting current

Musallam, M.; Acarnley, P.P.; Johnson, C.M.; Pritchard, L.S.; Pickert, Volker

doi:10.1049/iet-cds:20060066

Cited by 14 publications

(7 citation statements)

References 6 publications

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“…It is known from Fig.6 that the thermal property parameters such as R th and C th of each layer are needed in the RC network, but it is not straightforward to obtain these parameters. In order to simplify, a 4 th order Foster characteristic equivalent circuit is adopted to adequately describe the thermal property of IGBT module from junction to case [12,13], as shown in Fig.7. The Forster-based junction temperature calculation model is also called the traditional model used widely, which is compared with the improved thermal coupling model in the following section.…”

Section: A Improved Thermal Coupling Impedance Modelmentioning

confidence: 99%

“…An infrared radiation thermal imaging technology for temperature testing was used in [9][10], but the method requires modification of the encapsulation, which is not allowed outside the laboratory. Various methods were proposed to construct a thermal impedance network to predict the chip temperatures [11][12][13]. However, their accuracy is always a concern, because the thermal coupling effect among chips in a multi-chips paralleled IGBT module is usually ignored.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Liao

Zeng

et al. 2017

IEEE Trans. Energy Convers.

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way.Publisher's statement: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP url' above for details on accessing the published version and note that access may require a subscription.

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Section: A Improved Thermal Coupling Impedance Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Liao

Zeng

et al. 2017

IEEE Trans. Energy Convers.

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“…Power dissipation can be controlled through regulating the current limit, switching frequency and DC link voltage in a way that limits temperature variations [5][6][7]. Dynamic cooling of power modules is another way to reduce temperature variations [8].…”

Section: Introductionmentioning

confidence: 99%

Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules

Eleffendi

Johnson

2016

IEEE Trans. Power Electron.

133

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Knowledge of instantaneous junction temperature is essential for effective health management of power converters, enabling safe operation of the power semiconductors under all operating conditions. Methods based on fixed thermal models are typically unable to compensate for degradation of the thermal path resulting from aging and the effect of variable cooling conditions. Thermo-sensitive electrical parameters (TSEPs), on the other hand, can give an estimate of junction temperature T J , but measurement inaccuracies and the masking effect of varying operating conditions can corrupt the estimate. This paper presents a robust and noninvasive real-time estimate of junction temperature which can provide enhanced accuracy under all operating and cooling conditions when compared to model-based or TSEP-based methods alone. The proposed method uses a Kalman filter to fuse the advantages of model-based estimates and an online measurement of TSEPs. Junction temperature measurements are obtained from an online measurement of the on-state voltage, V CE(ON) , at high current and processed by a Kalman filter which implements a predict-correct mechanism to generate an adaptive estimate of T J . It is shown that the residual signal from the Kalman filter may be used to detect changes in thermal model parameters, thus allowing the assessment of thermal path degradation. The algorithm is implemented on a full-bridge inverter and the results verified with an IR camera.

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“…• Estimation of device losses and hence junction temperature from converter operating conditions and the packaging and heatsink thermal impedance [10], [18]- [20].…”

Section: Introductionmentioning

confidence: 99%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

195

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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Estimation and control of power electronic device temperature during operation with variable conducting current

Cited by 14 publications

References 6 publications

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

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