1985
DOI: 10.1063/1.95609
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Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

Abstract: Photoelectrochemical etching of InP is used to etch deep (80 μm), narrow (20 μm) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C3) lasers. Large numbers of low threshold C3 lasers wth very similar cavity lengths were obtained.

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Cited by 15 publications
(9 citation statements)
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“…Reactions [1][2][3][4][5] are sufficient to account for the shape of the voltammograms. One could also assume additional steps, such as…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Reactions [1][2][3][4][5] are sufficient to account for the shape of the voltammograms. One could also assume additional steps, such as…”
Section: Resultsmentioning
confidence: 99%
“…In order to find the ratio between the different competitive anodic reactions (i.e., the reactions in Eq. [1], [6][7][8]), atthe photoelectrode, the amount of charge passed in the anodic process (under light) and in the cathodic process (in the dark) was measured. The ratio of the two quantities characterizes the extent of electrode decomposition vs. total photoreaction.…”
Section: Resultsmentioning
confidence: 99%
“…Anodic dissolution is used to perform accurate etching over a large range of etching rates and to give a damage-free final surface [6][7][8][9][10][11][12][13][14]. Anodic etching implies combined growth and dissolution of oxide, partly governed by electrochemical parameters [13][14][15][16][17][18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…As in the gas-phase work, the majority of the etching reactions in the liquid phase are photoelectrically driven, giving up to a hundred times enhancement over the dark reaction (Bowers et al 1985). A solar source could be a direct replacement for currently used light sources in such applications if the economic and source availability factors discussed in Section 4.2 can be satisfactorily addressed.…”
Section: Liquid Phase Systemsmentioning
confidence: 99%
“…The materials that have been etched are Si (Bunkin et al 1985), GaAs (Podlesnik et al'1984), InP (Bowers et al 1985), GaP (Johnson and Tisone 1984), CdS (Tenne and Hodes 1983).…”
Section: Liquid Phase Systemsmentioning
confidence: 99%