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Photoelectrochemical etching of InP is used to etch deep (80 μm), narrow (20 μm) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C3) lasers. Large numbers of low threshold C3 lasers wth very similar cavity lengths were obtained.

We report a sensitive new technique for probing dynamic sheet charge density variations in integrated silicon devices. Using a specially designed noninvasive Nomarski phase contrast interferometer a sheet charge density sensitivity of 2.6×108 e/cm2/(Hz)1/2 is extracted from experimental data for 1 mA of detected photocurrent. This charge density sensitivity makes possible μV signal level detection in an active device, and with digital signals the corresponding signal/noise level is sufficiently high that multimegabaud data can be captured in real time.