Noninvasive sheet charge density probe for integrated silicon devices

Heinrich, H.; Bloom, D. M.; Hemenway, B. R.

doi:10.1063/1.96598

Cited by 85 publications

(7 citation statements)

References 7 publications

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“…The upper end of the dynamic range is determined by the nature of the electro-optic modulation transfer function which relates the transmitted beam intensity 1(V) to the voltage V on the transmission line according to 1(V) = (i + siniri) , (10) where Io=average beam intensity. For small signals (V << V,), this relationship is quite linear but as the measured voltage increases, the nonlinearity of the sin(irV/Vir) term begins to expose itself.…”

Section: Yb Electrooptic Samplingmentioning

confidence: 99%

<title>Modern high-speed measurement techniques</title>

Kolner

1994

SPIE Proceedings

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Today's high speed electronic devices and networks challenge the capabilities of commercially available test instrumentation. Modern techniques using ultrashort light pulses and electron beams are now routinely used to characterize these fast circuits but are not without their limitations. In this paper I discuss the performance characteristics common to all these measurement techniques and compare some of them in a context that will be applicable to future techniques as they develop.

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Section: Yb Electrooptic Samplingmentioning

confidence: 99%

<title>Modern high-speed measurement techniques</title>

Kolner

1994

SPIE Proceedings

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“…Index modulation is another effect being investigated for silicon -based devices, but it also utilizes a backside probing geometry [17].…”

Section: Electro -Optic Receiver Integration Issuesmentioning

confidence: 99%

“…Because this internal probing scheme also requires the semiconductor substrate to be electro-optic, the internal probe technique is limited to GaAs and InP devices. Index modulation is another effect being investigated for silicon-based devices, but it also utilizes a backside probing geometry [17].…”

Section: Electro-optic Receiver Integration Issuesmentioning

confidence: 99%

Systems Solutions Based On Electro-Optic Sampling To High Speed Ic Test Problems

Henley¹,

MacDonald²

1988

SPIE Proceedings

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All current commercial test systems are limited to data and clock rates of less than 200 MHz. However, many devices being built today operate at data rates greater than 1 GHz (1000 MHz).The inability to make high -speed tests stems from the many problems of measuring a device's high -speed input and output waveforms electrically.The electrical measurement methods used in the current test systems can no longer meet time accuracy and waveform fidelity requirements and are unlikely to do so in the foreseeable future. The problems associated with high -speed measurement include high pin capacitance, long device pin to receiver distances, limited receiver bandwidths, and situating numerous complex electronic assemblies within a small radius of the device.Many of these difficulties can be substantially reduced or eliminated using an electro -optic means of sensing the high -speed test waveforms.The advantages of extracting high -speed device voltage information using electro -optic techniques include non -invasiveness (low capacitance) and very high bandwidth (greater than 10 GHz). Current work in this field is reviewed showing that although electro -optic test techniques have been demonstrated to work well into the hundreds of gigahertz, the techniques are not as yet suitable for the production testing of high -speed integrated circuits.

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“…When the device is analyzed with contactless optical tools like dynamic light emission [2,3] or electro-optical probing [4,5], for example, the operator relies on NIR (Near Infrared) backside imaging of the circuit to navigate on it. For various reasons, the signal acquired by the optical sensor can be of poor quality.…”

Section: Introductionmentioning

confidence: 99%