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GaAs solar cells with different structures and polarities were irradiated with 1 and 5 MeV electrons. The energy dependence of the electron damage coefficients for the photocurrent, photovoltage, and maximum power were found to vary approximately linearly with NIEL in contrast to what has been found for other GaAs cells.

Advances in device development have enabled concurrent stimulation and recording at adjacent locations in the central nervous system. However, stimulation artifacts obscure the sensed underlying neural activity. Here, we developed a novel method, termed Period-based Artifact Reconstruction and Removal Method (PARRM), to remove stimulation artifacts from neural recordings by leveraging the exact period of stimulation to construct and subtract a high-fidelity template of the artifact. Benchtop saline experiments, computational simulations, five unique in vivo paradigms across animal and human studies, and an obscured movement biomarker were used for validation. Performance was found to exceed that of state-of-the-art filters in recovering complex signals without introducing contamination. PARRM has several advantages: it is 1) superior in signal recovery; 2) easily adaptable to several neurostimulation paradigms; and 3) low-complexity for future on-device implementation. Real-time artifact removal via PARRM will enable unbiased exploration and detection of neural biomarkers to enhance efficacy of closed-loop therapies.SummaryOnline, real-time artifact removal via PARRM will enable unbiased exploration of neural biomarkers previously obscured by stimulation artifact.

A photoresist etch mask process has been developed for the etching of (110) direction, (111B) faceted v‐grooves in normalInP (001) wafers. Etching rates are measured about 0.083 and 0.042 μm/s for etching depth and undercutting, respectively. The undercutting mechanism is discussed. The deterioration of the etching solution and the resist mask have been studied.