Ethylenediamine-Enhanced Oxidation Resistivity of a Copper Surface during Water-Based Copper Nanowire Synthesis

Koo, Jahyun; Kwon, Soonho; Kim, Na Rae; Shin, Kihyun; Lee, Hyuck Mo

doi:10.1021/acs.jpcc.5b10733

Cited by 22 publications

(21 citation statements)

References 44 publications

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“…By using a Gaussian fitting method, the fitting of O 1s spectrum (Figure b) discloses the presence of the multiple peaks of variable intensities and binding energies. The most intense major peak at ≈529.8 eV represents the surface hydroxyl (OH) groups, whereas the deconvoluted peaks at ≈530.9 and ≈532.8 eV specify the existence of oxygen attached to Cu (Cu + OH, Cu + O), respectively, in the composite . As presented in Figure c, the fitting of Cu 2p spectra discloses the presence of CuO peaks and its binding energies.…”

Section: Resultsmentioning

confidence: 88%

Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Song

Jiang

et al. 2017

Adv Funct Materials

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Intrinsically p-type conductivity and a wide bandgap of ≈3.6 V endow inorganic delafossite CuGaO 2 with great promise for fabricating high-performance UV photodetectors. Nevertheless, CuGaO 2 -based optoelectronic devices hindered because the intrinsic direct transitions are symmetry forbidden in CuGaO 2 . This study reports a large-area synthesis of "CuGaO 2 nanoplate/ZnS microsphere" heterostructure arrays using a facile solution-based strategy associated with an oil/water interfacial self-assembly approach. It is found that a large number of ZnS microspheres with a polycrystalline structure grow on the top surface of CuGaO 2 hexagonal platelets through Ostwald ripening mechanism, forming high-density p-n heterojunctions. A parabolic dependence between the size of ZnS microsphere and the growth time is confirmed in this growth. The UV light adsorption of the heterostructure CuGaO 2 /ZnS thin film is two times higher than that of the pristine CuGaO 2 thin film. Furthermore, the as-designed "CuGaO 2 nanoplate/ ZnS microsphere" heterostructure arrays exhibit enhanced photoresponse properties. This work offers a new insight into the rational design of optoelectronic devices from the synergetic effect of p-type 2D nanoplates as well as n-type nanostructures such as ZnS, ZnO, CdS, and CdO.

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Section: Resultsmentioning

confidence: 88%

Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Song

Jiang

et al. 2017

Adv Funct Materials

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“…18 Short-chain alkyl diamines, such as ethylenediamine (EDA), have also been used to synthesize and protect Cu NWs. 11,[19][20] The Cu NWs synthesized from EDA were found to be oxidation-resistant in polar organic solvents, but oxidized easily in nonpolar organic solvents and water. 11 One solution to prepare oxidation-resistant electrochemical active Cu NWs is to have a thin layer of conducting polymer coated on Cu NWs in-situ.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of oxidation-resistant electrochemical-active copper nanowires using phenylenediamine isomers

et al. 2019

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Phenylenediamine (PDA) was chosen as a coordinating, reducing, and capping agent to effectively direct growth and protect against oxidation of Cu nanowires (Cu NWs) in an aqueous solution. PDA was found to reduce Cu (II) to Cu (I) at room temperature, and stabilize the resulting Cu (I) by forming a coordination complex. The presence of a stable Cu (I) complex is the key step in the synthesis of Cu NWs under mild conditions. Different PDA isomers lead to different growth paths of forming Cu NWs. Both pPDA and mPDA-synthesized Cu NWs were covered with a thin layer of polyphenylenediamine and show excellent anti-oxidation properties, even in the presence of water. The usefulness of the present and electrochemical active Cu NWs for a variety of nanotechnology applications is discussed.

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“…Figure a shows the demonstration of direct transfer‐printing of metal NWs to the inorganic semiconductor substrates. The Cu NWs, synthesized via water‐based process,17 were transferred onto inorganic semiconductors (Si and a‐IGZO) and its dielectric materials (SiN x and SiO 2 ) using vacuum filtration. After dispersal in isopropyl alcohol (IPA) and cleaning with diluted acetic acid (2 wt%), the vacuum‐filtered Cu NWs formed organic‐residue‐ and oxide‐free Cu NWs on the membrane (polytetrafluoroethylene (PTFE) unlaminated membrane) 18,19.…”

Section: Resultsmentioning

confidence: 99%

“…The contact resistance between the Cu NWs/Ag NWs and Si substrate was characterized by the TLM measurement 16,17. In this measurement (Figure 2a), the width of the channel was fixed at 1 mm, and the length of the channel ( L ) was varied from 0.03 to 11 mm.…”

Section: Methodsmentioning

confidence: 99%

Integration of Ultrathin Silicon and Metal Nanowires for High‐Performance Transparent Electronics

Koo

Lee

Chu

et al. 2020

Adv Materials Technologies

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conventional conductive oxides. [1][2][3][4] Hybrid metal nanowires with other nanofilms [5,6] have more improved performance by compensating limitation of each film for transparent conductive electrode (TCE) due to its low contact resistance and shorter electrical pathways, [7] compared with isotropic nanostructure. [8] In past few years, the advance of the hybrid multilayers integrated with semiconductor is very critical for the high-performance TCE-based applications. For example, organic semiconductor integrated with an Ag cathode (70 nm thick) and an Ag NWs anode (80% transparency) gives 40% higher short circle current than that of ITO-based solar cell. [9] Organic semiconductor integrated with hybrid polyethylene terephthalate (PET)/ Ag nanomesh/PH1000 electrode (≈84% transparency, ≈3 Ω □ −1 ) allows highly efficient, transparent, and stretchable solar cell. [10] Although many promising results have been obtained using small-molecule organics and polymers, [11] the electrical performance is still low for many potential applications. These conductor/conductortype or conductor/semiconductor-type of hybrid films is limited in electrode applications, not a highperformance device level.Recent developments in ultrathin silicon nanomembranes (Si NMs) with thicknesses in the range of 10-300 nm offer opportunities in flexible, transparent research, as suggested by recent devices that provide operational features unavailable with bulk materials. [12] For example, 1) high-performance inorganic semiconductor for an active device (e.g., diode, transistor, and other integrated circuit of them), 2) photovoltaic property (e.g., solar cell and photodiode applications), 3) piezoelectric property (e.g., energy harvester and mechanical generator), 4) biodegradable property (e.g., minimally invasive biomedical device), [13,14] 5) mechanical flexibility and foldability (1-100 µm critical bending radius), [15,16] 6) optical transparency (68-78% transparency), [15] and 7) compatibility with conventional processes in the Si industry with the retention of outstanding electrical properties and reliability.Here, we propose the integration of Si NM and metal NWs (as a transparent electrode) to explore the transparent but versatile and high performance electronics by exploiting unique characteristic of Si semiconductor. Specifically, vacuum filtration and hot-rolling transfer provides efficient route to fabricate residue-and oxide-free metal NWs film integrated with Si NM. Transparent conducting electrodes (TCE) using metal (Cu and Ag) nanowires (NWs) have received great attention, due to their high conductivity, flexibility, and transparency, as alternatives for conventional conductive oxides. Hybridizing with semiconductor, the metal NWs TCE allows for transparent, flexible but high-performance functional devices such as logical circuit and active device components. However, the electrical performance of hybrid metal NWs/organic semiconductor is still low compared to the hybrid with inorganic semiconductor, such as a-Si, while the ino...

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Ethylenediamine-Enhanced Oxidation Resistivity of a Copper Surface during Water-Based Copper Nanowire Synthesis

Abstract: Figure S1. SEM image of Cu heads produced with 4 mmol of EDA at the two-step reaction temperature.

Cited by 22 publications

References 44 publications

Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Synthesis of oxidation-resistant electrochemical-active copper nanowires using phenylenediamine isomers

Integration of Ultrathin Silicon and Metal Nanowires for High‐Performance Transparent Electronics

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Ethylenediamine-Enhanced Oxidation Resistivity of a Copper Surface during Water-Based Copper Nanowire Synthesis

Abstract: Figure S1. SEM image of Cu heads produced with 4 mmol of EDA at the two-step reaction temperature.

Cited by 22 publications

References 44 publications

Solution‐Growth Strategy for Large‐Scale “CuGaO2 Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Solution‐Growth Strategy for Large‐Scale “CuGaO2 Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Synthesis of oxidation-resistant electrochemical-active copper nanowires using phenylenediamine isomers

Integration of Ultrathin Silicon and Metal Nanowires for High‐Performance Transparent Electronics

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Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties