Solution‐Growth Strategy for Large‐Scale “CuGaO<sub>2</sub> Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Li, Yanmei; Song, Yun; Jiang, Yaojia; Hu, Mingxiang; Pan, Zhichang; Xu, Xiaojie; Chen, Hongyu; Li, Yuesheng; Hu, Linfeng; Fang, Xiaosheng

doi:10.1002/adfm.201701066

Cited by 27 publications

(31 citation statements)

References 47 publications

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“…Thus, the relatively long trapping time and short transit time leads to a high gain. In addition, an ultrahigh and stable photocurrent of ≈4 mA at 3 V is observed (see Figure b), exceeding that of most PDs reported in literature (see details in Table S2, Supporting Information), which suggests that it can be easily integrated with a commercial data reader and a wireless data transporter that typically require a threshold current of ≈ 1 mA. The correlation between photocurrent and power density of such device was also calculated, as indicated in Figure c.…”

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confidence: 69%

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO₂ Photodetector

et al. 2018

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Solar radiation, especially ultraviolet (UV) light, is a major hazard for most skin-related cancers. The growing needs for wearable health monitoring systems call for a high-performance real-time UV sensor to prevent skin diseases caused by excess UV exposure. To this end, here a novel self-powered p-CuZnS/n-TiO UV photodetector (PD) with high performance is successfully developed (responsivity of 2.54 mA W at 0 V toward 300 nm). Moreover, by effectively replacing the Ti foil with a thin Ti wire for the anodization process, the conventional planar rigid device is artfully turned into a fiber-shaped flexible and wearable one. The fiber-shaped device shows an outstanding responsivity of 640 A W , external quantum efficiency of 2.3 × 10 %, and photocurrent of ≈4 mA at 3 V, exceeding those of most current UV PDs. Its ultrahigh photocurrent enables it to be easily integrated with commercial electronics to function as a real-time monitor system. Thus, the first real-time wearable UV radiation sensor that reads out ambient UV power density and transmits data to smart phones via wifi is demonstrated. This work not only presents a promising wearable health monitor, but also provides a general strategy for designing and fabricating smart wearable electronic devices.

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confidence: 69%

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO₂ Photodetector

et al. 2018

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“…On account of this, an idea of constructing p–n heterojunction comes up, where the surface modification by a p‐type transparent conductor would help minimize the effect of oxygen molecules adsorption. A faster response speed and even a higher photocurrent can also be envisioned, as the built‐in electric field near the p–n interference could effectively facilitate the separation of photogenerated e–h pairs . Besides, the built‐in electric field will endow it with a self‐powered feature …”

Section: The Characteristic Parameters Of Sno2‐based Uv Pds In the LImentioning

confidence: 99%

Self‐Powered n‐SnO₂/p‐CuZnS Core–Shell Microwire UV Photodetector with Optimized Performance

Cai

et al. 2018

Advanced Optical Materials

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to the long chemical readsorption process (oxygen molecules readsorption) occurred at the surface. [10,11] In contrast, the photo voltaic PDs including p-n homojunctions, p-n heterojunctions, and Schottky barrier diodes show a fast response speed and a possible selfpowered function due to the photovoltaic effect. Furthermore, as there is an increasing emphasis on low energy consumption, selfpowered PDs which can operate without an external power source are particularly appealing in applications like submarine oil leakage monitoring and forest fires prevention. [12] Thus, researchers are highly motivated to develop highperformance UV PDs with selfpowered characteristics.Thanks to the continuous innovations in semiconductor technology, various widebandgap materials such as diamond, ZnO, TiO 2 , ZnS, etc., have drawn great attention in the field of UV PDs. [13][14][15][16] Among them, SnO 2 , a conventional metal oxide with a direct bandgap, is generally regarded as a ntype material in its undoped form because of the intrinsic defects. It possesses unique chemical, electrical, and optoelectronic properties, thus having vast applications in gas sensors, transparent conductors, and optoelectronic devices. [17][18][19] In particular, with a wide bandgap of ≈3.6 eV (at 300 K), SnO 2 exhibits good UV light absorption characteristics and high vis ible light transparency, making it an ideal candidate for UV PD, especially under acidic or alkalic circumstances in comparison with ZnO. [20] Up to now, various efforts have been devoted to demonstrate the excellent UV photosensitivity of SnO 2 . Previ ously, our group presented thin SnO 2 nanowire UV PDs with a high external quantum efficiency. [21] Chen et al. [22] fabricated monolayer SnO 2 nanonets with a high UV photocurrent. Tian et al. [23] reported ZnOSnO 2 heterojunction nanofibers with a high UV photodark current ratio. However, the response time of the works mentioned above is still dissatisfactory, of which the decay time is >50 s, [22] ≈50 s, [21] and 7.8 s, [23] respectively. Recently, Ling et al. [24] constructed a SnO 2 nanoparticle thin film/ SiO 2 /pSi heterojunction, which exhibited a short response time (<0.1 s) and a high UV photocurrent (≈4.0 × 10 −5 A), however, it suffered from a low photosensitivity (≈40) due to the high dark current. Thus, a combination of a high photosensitivity and a fast response speed has not been realized in SnO 2 PDs, not to men tion additional functions including selfpowered property and flexibility.Herein, a single-crystal SnO 2 microwire photodetector (PD) is demonstrated with a fast response speed owing to a low concentration of point defects. However, the presence of surface defects (e.g., oxygen vacancies) still limits its optoelectronic performance. To further improve the photoresponse of such device, a core-shell p-n junction is constructed by simply coating a new p-type transparent conductive (CuS) 0.35 :(ZnS) 0.65 nanocomposite film (CuZnS) on n-type SnO 2 microwire. As a result, not only the surface of SnO 2 is modified...

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Section: Zns Nanostructuresmentioning

confidence: 99%

“…In addition to ZnO and SnO 2 , CuGaO 2 is another oxide candidate to composite with ZnS for improved optoelectronic performance . CuGaO 2 nanoplate/ZnS microsphere heterostructure arrays were synthesized by oil–water interfacial self‐assembly .…”

Section: Applicationsmentioning

confidence: 99%

“…There is not a perfect material, but the potential of developing a material is beyond limitation. The past few years have witnessed extensive designing and engineering of ZnS to explore its potentials in specific applications . This review summarizes the recent breakthroughs on ZnS‐based materials as excellent candidates in optoelectronic devices, photocatalysis, and other novel functional devices.…”

Section: Introductionmentioning

confidence: 99%

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Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Liu

Chen

et al. 2018

Adv Funct Materials

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ZnS, as one of the first semiconductors discovered and a rising material star, has embraced exciting breakthroughs in the past few years. To shed light on the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review. Recent progress on modifications of ZnS allows it to be extensively and effectively used in versatile applications, including transparent conductors, UV photodetectors, luminescent devices, and catalysis, which are clearly and comprehensively summarized in this work. Novel functional devices springing up from the newly developed ZnS-based materials are highlighted as well. This review not only provides a scientific insight into the advances of ZnS-based materials, but also touches on the future opportunities in this inspiring field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802029. relatively high charge recombination rate and low charge transport process inhibit the optoelectronic properties of ZnS as a high-performance photodetector. As a window layer of optoelectronic devices, a lack of high electrical conductivity typically hinders the practical use of ZnS in solar cells, photodiodes, light-emitting devices, etc. As a photocatalyst, the transparency of ZnS becomes a drawback as it suffers from a poor utilization of sunlight.There is not a perfect material, but the potential of developing a material is beyond limitation. The past few years have witnessed extensive designing and engineering of ZnS to explore its potentials in specific applications. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] This review summarizes the recent breakthroughs on ZnS-based materials as excellent candidates in optoelectronic devices, photocatalysis, and other novel functional devices. More importantly, it sheds light on the design principles and fundamental mechanisms of the improved performance of ZnS through strategies such as developing novel nanostructures, bandgap engineering, alloying with other materials, etc. To the best of our knowledge, it is the first comprehensive review on the design principles and material engineering of ZnS for novel/improved properties and intended applications. Briefly, current literature on a variety of ZnS-based structures was first summarized, ranging from 0D to 2D nanostructures. Then, the representative applications of ZnS-based materials are described, which are mainly consisted of four parts, as shown in Figure 1: transparent conductors, UV photodetectors, luminescent devices, and catalysis. Each part contains the latest design strategies of ZnS for the intended applications, fabrication techniques, representative examples, and the state-of-the-art devices. Finally, it outlines the challenges and opportunities in each field. In particular, we provide our perspectives on the future research directions of ZnS in energy and environment.

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Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Cited by 27 publications

References 47 publications

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO₂ Photodetector

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO₂ Photodetector

Self‐Powered n‐SnO₂/p‐CuZnS Core–Shell Microwire UV Photodetector with Optimized Performance

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

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Solution‐Growth Strategy for Large‐Scale “CuGaO2 Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

Cited by 27 publications

References 47 publications

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO2 Photodetector

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO2 Photodetector

Self‐Powered n‐SnO2/p‐CuZnS Core–Shell Microwire UV Photodetector with Optimized Performance

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

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Solution‐Growth Strategy for Large‐Scale “CuGaO₂ Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO₂ Photodetector

A Real‐Time Wearable UV‐Radiation Monitor based on a High‐Performance p‐CuZnS/n‐TiO₂ Photodetector

Self‐Powered n‐SnO₂/p‐CuZnS Core–Shell Microwire UV Photodetector with Optimized Performance