European Roadmap of Multijunction Solar Cells and Qualification Status

Strobl, G.; Bergunde, T.; Köstler, Wolfgang; Kern, R.; Meusel, M.; LaRoche, G.; Zimmermann, Walter; Aw, Bett; Dimroth, Frank; Geens, Wim; Taylor, Steven J.; Fernández, Emilio; Gerlach, L.; Signorini, C.; Hey, G.

doi:10.1109/wcpec.2006.279839

Cited by 14 publications

(6 citation statements)

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“…2,3 Due to this unique control, IIIÀV alloys find special uses in biomedical imaging, 4 light-emitting diodes, 5 lasers, 6 heterojunction bipolar transistors, 7 and high-performance multijunction photovoltaic cells. 8 Indium gallium phosphide (In x Ga 1Àx P) is a pseudobinary IIIÀV alloy of an indirect band gap semiconductor, gallium phosphide (GaP), and a direct band gap semiconductor, indium phosphide (InP). This alloy possesses a tunable band gap that ranges from 1.35 to 2.26 electron volts (eV), which is direct for the composition range 1 g x g 0.2À0.3.…”

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confidence: 99%

“…The III–V semiconductors are well suited for a number of optoelectronic applications because of their typically high carrier mobilities and direct band gaps . Among them, pseudobinary alloys of III–Vs feature structural and electronic properties such as band gap, index of refraction, and lattice constant that can be directly modified through the tuning of their composition. , Due to this unique control, III–V alloys find special uses in biomedical imaging, light-emitting diodes, lasers, heterojunction bipolar transistors, and high-performance multijunction photovoltaic cells …”

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Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

Kornienko¹,

Whitmore²,

Yu³

et al. 2015

ACS Nano

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The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conversion. However, their fabrication typically requires complex gas phase instrumentation or growth from high-temperature melts, which consequently limits their prospects for widespread implementation. Furthermore, the need for lattice matched growth substrates in many cases confines the composition of the materials to a narrow range that can be epitaxially grown. In this work, we present a solution phase synthesis for indium gallium phosphide (In(x)Ga(1-x)P) alloy nanowires, whose indium/gallium ratio, and consequently, physical and electronic structure, can be tuned across the entire x = 0 to x = 1 composition range. We demonstrate the evolution of structural and optical properties of the nanowires, notably the direct to indirect band gap transition, as the composition is varied from InP to GaP. Our scalable, low-temperature synthesis affords compositional, structural, and electronic tunability and can provide a route for realization of broader In(x)Ga(1-x)P applications.

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confidence: 99%

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confidence: 99%

Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

Kornienko¹,

Whitmore²,

Yu³

et al. 2015

ACS Nano

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“…72 mm GaInP2/GaAs/Ge triple junction cells and one top-and middle-component cells have been used in this work. Component cells are single-junction cells that have the same electrical and optical properties as the corresponding sub cell in the triple junction cell stack [15,16]. Details on the structure of the triple junction solar cell studied are given in reference [17].…”

Section: E Xperimentalmentioning

confidence: 99%

The influence of high temperatures on radiation damage of GaInP₂/GaAs/Ge triple junction cells

Brandt¹,

Baur

Caon

et al. 2012

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

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We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GalnP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.

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“…The research on solar cells for space applications is increasingly focusing on higher efficiencies and thinner cells in order to increase the power-to-weight (W/g) ratio [1]. Today's state-of-the-art technology for space is a triple junction (TJ) GaInP/GaInAs/Ge cell, which is current-limited by the topcell, whereas the Ge subcell produces excess current.…”

Section: Introductionmentioning

confidence: 99%

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

Weiss

Park

Lefèvre

et al. 2020

Solar Energy Materials and Solar Cells

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We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (τeff) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (µW-PCD) method. We examine the dependence of τeff on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured τeff before and after irradiation are used to estimate the minority carriers' diffusion lengths, which is an important parameter for solar cell operation. We observe τeff ranging from ≈ 50 to 230 µs for Ge doping levels between 1x10 17 and 1x10 16 at.cm -3 , corresponding to diffusion lengths of ≈ 500-1400 µm. A separation of τeff in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.

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European Roadmap of Multijunction Solar Cells and Qualification Status

Cited by 14 publications

References 1 publication

Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

The influence of high temperatures on radiation damage of GaInP₂/GaAs/Ge triple junction cells

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

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European Roadmap of Multijunction Solar Cells and Qualification Status

Cited by 14 publications

References 1 publication

Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

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The influence of high temperatures on radiation damage of GaInP₂/GaAs/Ge triple junction cells