Evaluating Constraints on Heavy-Ion SEE Susceptibility Imposed by Proton SEE Testing and Other Mixed Environments

Ladbury, Raymond L.; Lauenstein, J.-M.

doi:10.1109/tns.2016.2640948

Cited by 12 publications

(3 citation statements)

References 13 publications

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“…On the other hand, the range distribution of ions, taken in relative terms with respect to the SV thickness, is a decisive parameter when it comes to SEL triggering [37,38]. In this case, the LET of the secondary ions is not a good metric to determine the hadron response [39,40] because most of the secondary ions will not have a range long enough to transverse a significant portion of the sensitive volume and deposit enough energy to trigger a SEL.…”

Section: E Let Equivalent As Key Metricmentioning

confidence: 99%

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

Coronetti

Alía

Cerutti

et al. 2021

IEEE Trans. Nucl. Sci.

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Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event latch-up crosssection is, nonetheless, experimentally found to be lower than that of pions for all energies below 250 MeV. While Monte-Carlo simulations are capable of reproducing such behavior, the reason of the observed pion cross-section enhancement can only be explained by a deeper analysis of the underlying mechanisms dominating proton-silicon and pion-silicon reactions. The mechanisms dominating the single-event latchup response are found to vary with the energy under consideration. While a higher pion nuclear reaction rate, i.e., probability of interaction, can explain the observed latchup cross-section enhancement at energies > 100 MeV, it is the volume-equivalent linear energy transfer (LETEQ) of the secondary ions that keeps the pion latchup response high at lower energies. The higher LETEQ of secondary ions from pion-silicon interactions are caused by the pion absorption mechanism, which is highly exothermic. In spite of the observed higher cross-section for pions, the highenergy hadron approximation is found to still provide reliable estimations of the latch-up response of a device in mixed-field.

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Section: E Let Equivalent As Key Metricmentioning

confidence: 99%

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

Coronetti

Alía

Cerutti

et al. 2021

IEEE Trans. Nucl. Sci.

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“…The impact of high-Z materials on the equivalent LET produced by protons has also been investigated in the context of evaluating proton testing as a means of screening the heavy ion sensitivity [4], [24], [25]. In this context, the equivalent LET is defined as the deposited energy (typically through indirect energy deposition in the case of protons) divided by the SV thickness.…”

Section: Impact Of High-z Materials In a Generic See Modelmentioning

confidence: 99%

SEE Testing in the 24-GeV Proton Beam at the CHARM Facility

Alía

Brügger

Cecchetto

et al. 2018

IEEE Trans. Nucl. Sci.

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A 24 GeV proton beam is available at the CHARM facility which can be used to test components and boards for SEEs at a worst-case energy for both accelerator and interplanetary space applications. The main beam characteristics are described, and SEE results for three different components are presented in combination with Monte Carlo results, focusing on the significant energy dependence and risk of underestimating the operational error rate for hard spectral environments when considering SEE cross sections measured at proton cyclotron facilities.

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“…In this case, the sensitivity of the device chip to single-event transients will be further enhanced. In addition, the high current at the onset of single-event latching can also affect the normal operation of the device or even directly and severely damage it [9][10][11] .…”

Section: Introductionmentioning

confidence: 99%

Experimental evaluation of sensitivity of high-speed bus transceiver for space communication

Wen¹,

H²,

Mu³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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The bus transceiver is a key device for data caching and transmission in communication systems and a key device for space communication. In this paper, the carrier distribution in the silicon material inside the device is analyzed for a typical highspeed bus transceiver linear device, and the effects of 0.1nJ, 1.0nJ and 10nJ on the carrier concentration and focusing point are analyzed by finite element simulation. The single-particle transient (SET) sensitivity of each functional circuit of the device was analyzed by local scanning of the device chip using a pulsed laser beam. The critical laser energy and sensitive position distribution of the single-event transient of the device were obtained. It is found that the device will show transient pulses when the pulsed laser energy is around 1.3 nJ, single-particle latching phenomenon when the pulsed laser energy is around 1.8 nJ, and single-event latching phenomenon when the pulsed laser energy continues to increase to 5 nJ. This study explores an economical and convenient method of bus transceiver SET evaluation using pulsed laser probe, which is an important reference value for high-speed bus applications in space.

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Evaluating Constraints on Heavy-Ion SEE Susceptibility Imposed by Proton SEE Testing and Other Mixed Environments

Cited by 12 publications

References 13 publications

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

SEE Testing in the 24-GeV Proton Beam at the CHARM Facility

Experimental evaluation of sensitivity of high-speed bus transceiver for space communication

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