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Cross sections and failure in time rates for neutroninduced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. Index Terms-Cross section, failure in time (FIT), heavy ion, Monte Carlo, MOSFET, Monte Carlo radiative energy deposition (MRED), neutron, power, silicon carbide (SiC), singleevent burnout (SEB).

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We develop metrics for assessing effectiveness of proton SEE data for bounding heavy-ion SEE susceptibility. The simplest metric is just the areal coverage for the test, which can be expressed as the area on the test part which is struck on average by a single ion. This simple quantity can yield important insights into the efficacy of a given SEE test. We also develop methods for bounding heavy-ion SEE rates with proton data for both nondestructive and destructive SEE modes and for identifying the SEE response characteristics that render such bounding methods ineffective.

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trenchMOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V DS ) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample size s may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.