Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

Statistical Modeling for Radiation Hardness Assurance: Toward Bigger Data

“…3a and 3b show fluence to failure for 15 samples of two 100 V power MOSFETs. [13] While the ST-Micro HG0K failure fluences trend exponentially, the Fujitsu 2SK4219 seems to have excess early failures. Are the excesses significant?…”

“…These factors have increased interest in reliable destructive SEE rate estimation. [9][10][11][12][13] Such methods usually require estimation of at least the σ lim for failure or of σ vs. LET. Fig.…”

“…We can use that proportion, and assuming binomial statistics, estimate a confidence interval for the mean failure fluence. Reference [13] found that when irradiated with VGS=0 V and VDS=100 V, 16 of 22 2SK4219 MOSFETs failed after exposure to 1000 395-MeV Xe ions/cm 2 . Similarly 11 of 21 HG0K MOSFETs irradiated with VGS=0 V and VDS=100 V failed after irradiation with 10000 305-MeV Kr ions/cm 2 .…”

“…3 Fluence to failure and best-fit exponential trend for a) Fuji2SK4219 and b) ST Micro HG0K 100 V power MOSFETs irradiated with VDS=100 V and VGS=-10 V. Data courtesy of Veronique Ferlet-Cavrois. [13] This handbook summarizes over a decade's research into TID RHA methodology, including distribution-free and distribution-dependent sampling, radiation response variability (part-to-part and lot-to-lot), the role of overtest, the role of historical data and many other critical issues. Making no assumptions as to how radiation response varies from part-to-part, large sample sizes would be required to ensure reasonable confidence and probability of success (e.g.…”

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

“…In order to quantify the impact of heavy ion irradiation on the reliability of unbiased devices and devices biased inside their SOA an accelerated reliability standard method namely Constant Voltage Stress (CVS) was used [18]. The use of statistical methods for assessing heavy ion impact on device's sensitivity has appeared recently to be of interest in the field of radiation hardness assurance [11], [14], [19]- [21]. TDDB measurements are performed over time periods (less than 30 kseconds) by applying a constant voltage equal to 44 V on the gate oxide with source and drain grounded (i.e., V ).…”