On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

Abstract

This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

Statistical Modeling for Radiation Hardness Assurance: Toward Bigger Data

“…Often when VGS=0, a MOSFET will not fail during irradiation, but will fail during the post-irradiation gate stress (PIGS) test. [14] Under these conditions, the failure fluence cannot be measured. However, if the test fluence is sufficiently low, then only some of the parts will fail the PIGS test.…”