Response Variability in Commercial MOSFET SEE Qualification

Abstract

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trenchMOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V DS ) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample size s may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.

Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs

“…Power MOSFETs are widely applied in space power systems [1]. However, they are vulnerable to particle from galactic cosmic rays, solar flares, and radiation belts, which may cause total ionizing dose effects, single event gate rupture (SEGR) effects and single event burnout (SEB) effects [2,3]. There has been a substantial research on such radiation effects [4][5][6][7], whereas radiation hardening on power MOSFETs, the more necessary resolve, has only been discussed in a few articles [8][9][10][11][12] whose content mostly focused on a single hardening issue, such as SEB, SEGR, and TID.…”

Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

“…Several studies have shown the changes in static electrical characteristics of commercially available silicon (Si) and silicon carbide (SiC) power MOSFET under radiation [6], [7]. The results show that the ionizing total dose damage of power MOSFETs mainly appears as changes in I-V characteristics, especially the decrease of threshold voltage and the increase of current drive [8]. Neutron irradiation can cause functional failure of the ISSN: 2088-8708 commercial grade SiC power MOSFETs devices, mainly due to the ionizing effect caused by the recoil nucleus the obtained from collision of the neutron and the lattice atoms so to make the devices fail [9].…”