Evaluation of a 900 V SiC MOSFET in a 13.56 MHz 2 kW resonant inverter for wireless power transfer

Choi, Joo-Hong; Tsukiyama, Daisuke; Rivas, Juan

doi:10.1109/compel.2016.7556746

Cited by 17 publications

(7 citation statements)

References 8 publications

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“…These converters are susceptible to many catastrophic and degenerative failures. RF converters realised with solid state devices are smaller, cheaper, reliable and more efficient (> 85%) [5]- [9]. The solid state converters currently used at high frequencies but at low voltage levels are more reliable than their vacuum counterparts by a factor as much as 2.5 [7].…”

Section: Introductionmentioning

confidence: 99%

Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

Nair

Munk‐Nielsen

Jørgensen

2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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Wide bandgap (WBG) power electronic devices realized using silicon carbide (SiC) and gallium nitride (GaN) are increasingly replacing their silicon (Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF converters employed in various industrial applications are currently realized with vacuum tubes. Replacing vacuum tubes with solid state devices provides greater reliability. This requires power switches transferring high power at high switching speeds. Wide bandgap devices operating at these specifications are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz and compared with DE-275 Radio Frequency (RF) package performance under same operating conditions. Design considerations deduced from results can then be used in design of custom low voltage SiC RF modules and eventually can be used in the design of high voltage modules.

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Section: Introductionmentioning

confidence: 99%

Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

Nair

Munk‐Nielsen

Jørgensen

2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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“…For example, SiC is predominantly preferred to operate at under 4 MHz [14]- [16]. A team from Stanford University have demonstrated both SiC (900V C3M0065090J) and GaN (650V GS66508B) based 13.56 MHz high frequency resonant converter that achieves an output efficiency of 94% [17], [18]. GaN on the other hand have proved to be far superior in operating at higher than 10 MHz and is preferred in applications like wireless power transfer (WPT) [19], [20].…”

Section: Introductionmentioning

confidence: 99%

“…GaN on the other hand have proved to be far superior in operating at higher than 10 MHz and is preferred in applications like wireless power transfer (WPT) [19], [20]. The results in [17]- [19] are all based on a new current source resonant converter topology called Class-Φ 2 that operates in ZVS condition. The topology is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and Operation of Series-Parallel Resonant Load in Industrial RF Dielectric Heating Application

Ahmad

Jørgensen

Munk‐Nielsen

2023

IEEE Trans. on Ind. Applicat.

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“…However, converters based on vacuum tubes suffer from low efficiencies and are bulky in size. In comparison, typical low‐voltage resonant converters realised with solid‐state devices are smaller, cheaper and reach efficiencies >90% [6, 7].…”

Section: Introductionmentioning

confidence: 99%

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

Jørgensen

Aunsborg

Bęczkowski

et al. 2020

IET Power Electronics

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Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium-voltage silicon carbide (SiC) semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high-frequency range. High-voltage packages have been proposed in the literature that are suitable for the 10 kV SiC metal-oxide-semiconductor field-effect transistors (MOSFETS), and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high-frequency operation of a 10 kV SiC MOSFET die. This study proposes the design of a power module for MHz resonant operation of a 10 kV SiC MOSFET. At high switching frequencies, the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate-driver circuitry is experimentally verified. Finally, the resonant operation of a medium-voltage SiC MOSFET power module is demonstrated experimentally at 1 MHz.

show abstract

Evaluation of a 900 V SiC MOSFET in a 13.56 MHz 2 kW resonant inverter for wireless power transfer

Cited by 17 publications

References 8 publications

Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

Modeling and Operation of Series-Parallel Resonant Load in Industrial RF Dielectric Heating Application

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

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