Evaluation of organic perovskite photoconductors for direct conversion X-ray imaging detectors

Panneerselvam, Dhilippan M.; Kabir, Md. Tanvir

doi:10.1007/s10854-017-6409-5

Cited by 36 publications

(39 citation statements)

References 18 publications

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“…Figure a shows well‐resolved images of a leaf under visible light and X‐rays. Recently, halide perovskites are being considered as potential candidates for X‐ray detectors because of their X‐ray sensitivity and reasonable absorption coefficient as compared to the generally used amorphous selenium . In an X‐ray detector, the active layer has to be very thick to stop X‐ray penetration as the X‐ray photons have high energy and consequently strong penetration capabilities.…”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

“…The thickness of the active layer needs to be larger than the attenuation depth for an appreciable level of X‐ray absorption. Thus, halide perovskites can be used in X‐ray image detectors …”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

“…The sensitivity value influences the superiority of the obtained image. For mammographic applications, the X‐ray sensitivities of MAPbI 3 and MAPbBr 3 under different electric fields are depicted in Figure c,d; in this case, the X‐ray photon energy is 20 keV and the observed values are higher than that of amorphous Se …”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

“…Recently, halide perovskites are being considered as potential candidates for X-ray detectors because of their X-ray sensitivity and reasonable absorption coefficient as compared to the generally used amorphous selenium. [85] In an X-ray detector, the active layer has to be very thick to stop X-ray penetration as the X-ray photons have high energy and consequently strong penetration capabilities. The X-ray stopping power (attenuation coefficient, α) of a material is dependent on its atomic number, Z; the relationship between the attenuation coefficient and the atomic number is defined as α ∝ Z 4 /E 3 , where E is the photon energy of the X-ray.…”

Section: X-ray Detectorsmentioning

confidence: 99%

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Halide Perovskites for Applications beyond Photovoltaics

et al. 2018

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In recent years, halide perovskites have been attracting intense attention as novel materials for photovoltaic applications due to their high carrier mobility, extraordinarily long carrier diffusion lengths, and suitable optical bandgaps. Furthermore, there are extensive applications of halide perovskites owing to their exceptional attributes in different areas, such as light‐emitting diodes, lasers, X‐ray detectors, memory devices, and more. Here, the unique characteristics of halide perovskite materials are described, including their electrical and optical properties, to explain why these materials are so exciting for a wide variety of applications. After introducing the synthesis techniques used to prepare halide perovskite films, recent advances on the applications of halide perovskites beyond photovoltaics are addressed. The challenges to be overcome for several applications are described and it is suggested that halide perovskites are equivalent to a gold standard in developing next‐generation optoelectronic and electronic devices.

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Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

Section: X-ray Detectorsmentioning

confidence: 99%

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Halide Perovskites for Applications beyond Photovoltaics

et al. 2018

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X ‐ r ay Photoconductivity and Typical Large‐Area X ‐ r ay Photoconductors

Kabir¹

2022

Photoconductivity and Photoconductive Materials

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Properties of Excitons and Photogenerated Charge Carriers in Metal Halide Perovskites

2019

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their great success in photovoltaics (PVs), with a phenomenally rapid rise of the power conversion efficiency (PCE) from 3.8% [1] to over 23% [2,3] in the past few years. Such high PCE of perovskite solar cells has been ascribed to the ultralong carrier lifetimes, [4][5][6][7][8] long carrier diffusion lengths, [9][10][11][12][13][14] and the extraordinarily defect tolerance. [15][16][17] Following the success of perovskites in photovoltaics, research on light-emitting diodes (LEDs), [18,19] amplified spontaneous emission (ASE) or lasers, [20][21][22][23][24] and photodetectors [25][26][27][28][29] have also gained substantial interests. Meanwhile, the rapid progress of MHPs on various applications spurred a flurry of photophysical studies in order to understand the origin of the high performance of these devices, of which the nature of the photoexcitation species has been mostly debated. [5,22,30,31] Since the photoexcitation states near the bandgap affect the key processes such as charge transport and light emission of optoelectronic devices, there is no doubt that the investigation of electronic excitations near the optical band edge is crucial for MHPs. Such knowledge is essential not only for understanding the correlation between the fundamental photophysics and device performances, but also offering a guideline for their further applications with improved performances. Generally, there are two kinds of photoexcitations near the band edge for direct bandgap semiconductors: free carriers and excitons. Exciton binding energy that reflects the Coulomb interaction strength between photoexcited electrons and holes determines the balance of the populations between the two species. Typically, inorganic semiconductors are free-carrier materials with the exciton binding energies only in few meV at room temperature and their excited states being populated principally by free carriers. While organic semiconductors are excitonic materials with the exciton binding energies in hundreds of meV and thus excitons prevailing in the excited states. Whereas, MHPs that combine some merits of organic and inorganic semiconductors seem to stand for an exotic class of semiconductors between these two limiting cases, with the experimentally determined exciton binding energy varying in a wide range of 2 to more than 50 meV for the prototype perovskite MAPbI 3 . [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] Such large variations of the exciton binding energies reported for MHPs give rise to a strongly debated question, that is, whether free carriers or excitons are generated upon photoexcitation? In other words, what is the nature of the photoexcitation species Metal halide perovskites (MHPs) have recently attracted great attention from the scientific community due to their excellent photovoltaic performance as well as their tremendous potential for other optoelectronic applications such as light-emitting diodes, lasers, and photodetectors. Despite the rapid progress in device applications, a solid unders...

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Evaluation of organic perovskite photoconductors for direct conversion X-ray imaging detectors

Cited by 36 publications

References 18 publications

Halide Perovskites for Applications beyond Photovoltaics

Halide Perovskites for Applications beyond Photovoltaics

X ‐ r ay Photoconductivity and Typical Large‐Area X ‐ r ay Photoconductors

Properties of Excitons and Photogenerated Charge Carriers in Metal Halide Perovskites

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