Evaluation of Pre-Amorphized Layer Thickness and Interface Quality of High-Dose Shallow Implanted Silicon by Spectroscopic Ellipsometry

Shibata, Satoshi; Kawase, Fumitoshi; Kitada, Akihiko; Kouzaki, Takashi; Kitamura, Akira

doi:10.1109/tsm.2010.2072450

Cited by 8 publications

(5 citation statements)

References 20 publications

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“…The degree of reflectance modification can be used for estimating the implant dosage and damage. [18] The Si wafer with ~200 nm PECVD oxide layer showed very similar UV-VIS-NIR reflectance spectra to a Si wafer with surface modification by PID. This also indicates the reason why the remaining oxide thickness values of Si wafers with ~200 nm thick PECVD oxide and native oxide after plasma etching, showed similar values over the range of 8.9 ~ 9.8 nm, while they started from very different oxides in terms of thickness, quality and preparation method.…”

Section: Effect Of Plasma Etchingmentioning

confidence: 83%

Visualization of Plasma Etching Damage of Si Using Room Temperature Spectroscopic Photoluminescence

et al. 2013

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Room temperature photoluminescence (RTPL) spectroscopy was proposed as an in-line plasma-induced-damage (PID) visualization technique. As an application example, ~200 and ~600 nm thick oxide films on 300 mm wafers (SiO2/Si) grown by plasma enhanced chemical deposition (PECVD) were plasma etched under different etching and bias radio frequency (RF) power conditions. Oxide etch rate, oxide uniformity and RTPL spectra/intensity were measured and characterized under three excitation wavelengths (532, 650 and 827 nm) with different probing depths. A distinct pattern of PIDs was observed representative of showerhead patterns, common to a typical plasma etching system. Visualization of PIDs was successfully done by multiwavelength RTPL spectroscopy.

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Section: Effect Of Plasma Etchingmentioning

confidence: 83%

Visualization of Plasma Etching Damage of Si Using Room Temperature Spectroscopic Photoluminescence

et al. 2013

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“…The degree of reflectance modification can be used for estimating the implant dosage and damage. 27 The Si wafer with ∼200 nm PECVD oxide layer showed one distinctive interference fringe near 600 nm corresponding to the ∼200 nm thick oxide film on Si. The reflectance spectra after plasma etching ( Fig.…”

Section: Resultsmentioning

confidence: 98%

“…A similar effect has been reported in ion implanted Si. 26,27 Since the optical interference from very thin (<50 nm) silicon dioxide (SiO 2 ) on Si is insignificant, even in the UV region (<400 nm), proper oxide thickness estimation of native oxide, using the reflectance spectra, is not possible. Thickness measurements of very thin oxides (<50 nm) are typically done using ellipsometry, either single wavelength ellipsometry or spectroscopic ellipsometry (SE).…”

Section: Resultsmentioning

confidence: 99%

Visualization of Plasma Etching Damage of Si Using Room Temperature Photoluminescence and Raman Spectroscopy

Jian

Jeng

Wang

et al. 2013

ECS J. Solid State Sci. Technol.

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Room temperature photoluminescence (RTPL) and Raman spectroscopy were used for characterizing plasma-induced-damage (PID) of Si during plasma assisted Si processing. Oxide films with thicknesses of ∼200 and ∼600 nm were grown on 300 mm wafers by plasma enhanced chemical deposition (PECVD). Bare Si wafers with native oxide and PECVD oxide films were plasma etched under different etching and bias radio frequency (RF) power conditions. Oxide etch rate, oxide uniformity and RTPL spectra/intensity were measured and characterized under three excitation wavelengths (532, 650 and 827 nm) with different probing depths. High spectral resolution Raman measurements were performed under various excitation wavelengths from the ultraviolet (UV) to visible (VIS) region to verify the distribution of plasma etching damage in the depth direction as a function of plasma etching condition and structure of specimens. A distinct pattern of PID, corresponding to showerhead patterns, common to a typical plasma etching system, was observed from RTPL wafer mapping results. Multiwavelength Raman characterization revealed that the physical damage to the Si crystalline lattice, from plasma etching, was concentrated at, or near, the Si surface and SiO 2 /Si interface. Identification and characterization of PID were successfully done by using multiwavelength RTPL and Raman spectroscopy.

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“…In the past few decades the spectroscopic ellipsometry was extensively used to investigate ion implantation (Si + , Ge + , B + , P + , As + , Ar + , Xe + , and N 2 + ) of crystalline and polycrystalline silicon (Ibrahim & Bashara, 1972;Adams & Bashara, 1975;Adams, 1976;Jellison et al, 1981;Ohira & Itakura, 1982;Lohner et al, 1983;Vasquez et al, 1985;Vedam et al, 1985;Nguyen & Vedam, 1990;Miyazaki & Adachi, 1993;Fried et al, 1992Fried et al, , 2004Müller-Jahreis et al, 1995;Shibata et al, 1999Shibata et al, , 2010Giri et al, 2001;Tsunoda et al, 2002;Petrik et al, 2003;Yoshida et al, 2005;Stevens et al, 2006;Lioudakis et al, 2006aLioudakis et al, , 2006bPetrik, 2008;Matsuda et al, 2010;Mohacsi et al, 2011). One of the motivations of that was to get non-contact, non-destructive and rapid measurement technique with high accuracy and sensitivity for industrial applications (in particular, for integrated circuits (IC) manufacturing).…”

Section: Spectroscopic Ellipsometry Measurements On Implanted Siliconmentioning

confidence: 99%

Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

Shamiryan¹,

Likhachev²

2012

Ion Implantation

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Evaluation of Pre-Amorphized Layer Thickness and Interface Quality of High-Dose Shallow Implanted Silicon by Spectroscopic Ellipsometry

Cited by 8 publications

References 20 publications

Visualization of Plasma Etching Damage of Si Using Room Temperature Spectroscopic Photoluminescence

Visualization of Plasma Etching Damage of Si Using Room Temperature Spectroscopic Photoluminescence

Visualization of Plasma Etching Damage of Si Using Room Temperature Photoluminescence and Raman Spectroscopy

Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

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