Ion Implantation 2012
DOI: 10.5772/37758
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Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

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Cited by 8 publications
(8 citation statements)
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“…The refractive indices were collected for each of the different layers used in the simulation for varying wavelengths (table 2). Values for the refractive index of a-Si could not be determined using a database, thus the literature was used to determine average values for each wavelength [39][40][41].…”
Section: Resultsmentioning
confidence: 99%
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“…The refractive indices were collected for each of the different layers used in the simulation for varying wavelengths (table 2). Values for the refractive index of a-Si could not be determined using a database, thus the literature was used to determine average values for each wavelength [39][40][41].…”
Section: Resultsmentioning
confidence: 99%
“…This may be due to the layers limitation which perhaps begins to dominate, however, as previously suggested, this may be an accurate bias for manufacturing Table 2. Database refractive index values for the thin-film cell layers including Glass-BK7 [37], ITO [38], a-Si [39][40][41] and Ag [42].…”
Section: Resultsmentioning
confidence: 99%
“…Transmission Electron Microscopy (TEM) is an established tool to investigate these structures, but unfortunately it is very time consuming and difficult to determine at a same time a depth distribution profile of the cavities and an observation when defects of few nm to thousands nm are encountered in the same area. These structures can be studied by Spectroscopic Ellipsometry (SE) and, with appropriate multilayered models, the in-depth profiles of the implantation caused amorphization of Si and the cavity formation after thermal annealing can be evaluated [7,8,9,10]. SE has the advantage over TEM that it is fast, non destructive and so can be used as a feedback control during industrial process.…”
Section: Introductionmentioning
confidence: 99%
“…In theory, the implanted species damage the silicon substrate lattice, producing amorphous-Si like characteristics [6] and cause different refractive and absorption index compared to crystalline silicon substrate, therefore correlating to dose concentration. Furthermore, the damaged depth is a function of implant energy.…”
Section: Introductionmentioning
confidence: 99%