Evaluation of properties of Ta–Ni amorphous thin film for copper metallization in integrated circuits

Fang, Jau–Shiung; Hsu, T. P.; Ker, M.L.; Chen, H.C.; Lee, J.H.; Hsu, Ching-Tien; Yang, LM

doi:10.1016/j.jpcs.2007.07.046

Cited by 10 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in the formula, the diffusion coefficient is inversely proportional to the diffusion activation energy while the other parameters remain constant. Therefore, a decrease in the diffusion coefficient of Cu atoms in the diffusion barrier films will increase the difficulty of Cu atoms diffusion in the diffusion barrier films [ 42 , 43 ].…”

Section: Discussionmentioning

confidence: 99%

Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

Jiang

Wang

et al. 2020

Entropy

View full text Add to dashboard Cite

In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaTiZr-N for Cu/Si connect system was investigated after thermal annealing for an hour at 600 °C, 700 °C, 800 °C, and 900 °C. There were no Cu-Si intermetallic compounds generated in the Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si film stacks after annealing even at 900 °C through transmission electron microscopy (TEM) and atomic probe tomography (APT) analysis. The results indicated that AlCrTaTiZr/AlCrTaTiZr-N alloy films can prevent copper diffusion at 900 °C. The reason was investigated in this work. The amorphous structure of the AlCrTaTiZr layer has lower driving force to form intermetallic compounds; the lattice mismatch between the AlCrTaTiZr and AlCrTaTiZ-rN layers increased the diffusion distance of the Cu atoms and the difficulty of the Cu atom diffusion to the Si substrate.

show abstract

Section: Discussionmentioning

confidence: 99%

Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

Jiang

Wang

et al. 2020

Entropy

View full text Add to dashboard Cite

show abstract

“…If the protective layer for thin film resistors is exactly the same, the ability of finished resistors to resist heat and humidity is mainly determined by the performance of resistive films on resistors. In this study, the performance change of Cr-Si and Cr-Si-Ni resistive films in the heat and humid experiment were investigated to see whether metal Ni can improve the ability of the Cr-Si film to resist heat and humidity for three reasons: (1) metal Ni and its alloys are often used as resistive films in discrete resistors and hybrid integrated circuits [9][10][11][12]; (2) metal Ni and its alloys are widely used as catalysts of chemical reaction on hydrogen evolution [13][14][15][16]; (3) the thin film obtained by the sputtering method is composed of very fine particles with a large surface, which may lead to high catalytic activity of Ni-contained thin films on water decomposition and help to reduce water corrosion on the Cr-Si film in the heat and humid environment.…”

Section: Introductionmentioning

confidence: 99%

Effects of metal Ni with catalytic activity on magnetron sputtered Cr–Si resistive film in a heat and humid environment

Wang

Zhang

Shao³

et al. 2010

Surface and Coatings Technology

View full text Add to dashboard Cite

“…Amorphous metallic layers based on Ta were investigated recently as barrier layers for Cu interconnections in Si-based microelectronics [20,21]. It was shown that Ta 1−x Ni x layers do not crystallize up to temperatures above 600 • C and show resistivity values at room temperature of about 200 µ cm −1 .…”

Section: Introductionmentioning

confidence: 99%

Metallic seed layers for ion-beam assisted pulsed laser deposition of highly textured transition metal nitride films

Hühne¹,

Güth²,

Kidszun³

et al. 2008

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Ion-beam assisted deposition (IBAD) is a promising technique for preparing highly textured templates on various substrates. A major requirement for the textured nucleation of materials with a rocksalt structure using the IBAD approach is an amorphous seed layer. Metallic Ta0.75Ni0.25 films were used as amorphous layers on Si/Si3N4 as well as on electropolished Hastelloy tapes for the ion-beam assisted pulsed laser deposition of transition metal nitrides. Highly biaxially textured TiN and NbN films have been grown on these layers even at room temperature in a reactive deposition process using an ion beam with an energy of 800 eV under an angle of 45° relative to the substrate normal. The cube texture was preserved to higher thicknesses using homoepitaxial growth. Finally, 10 nm thick Au films were used to study the surface texture quantitatively using x-ray diffraction showing in-plane orientations down to 8°. The results offer the possibility to realize a fully conductive buffer layer architecture for high-temperature superconductors based on the IBAD approach.

show abstract

Evaluation of properties of Ta–Ni amorphous thin film for copper metallization in integrated circuits

Cited by 10 publications

References 10 publications

Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

Effects of metal Ni with catalytic activity on magnetron sputtered Cr–Si resistive film in a heat and humid environment

Metallic seed layers for ion-beam assisted pulsed laser deposition of highly textured transition metal nitride films

Contact Info

Product

Resources

About