Evaluation of SiC as a substrate material for nitride materials heteroepitaxy

Masri, P.; Laridjani, M. Rouhani; Breton, O.; Avérous, M.

doi:10.1016/s0921-5107(00)00776-5

Cited by 2 publications

(3 citation statements)

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“…6 Furthermore, it is a suitable substrate for the growth of nitride and epitaxial graphene layers. 7,8 While technologies for producing bulk hexagonal silicon carbide (α-SiC) have significantly advanced and device quality wafers have been commercially available for a number of years, the growth of bulk 3C-SiC is still lagging behind its hexagonal counterparts. The main problem hampering the progress in the growth of bulk 3C-SiC is a lack of high quality seeds which could be applied in the physical vapor transport (PVT) technique in the same way as it is done for the growth of large 4H-or 6H-SiC crystals.…”

Section: Introductionmentioning

confidence: 99%

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Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2014

Crystal Growth & Design

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We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral enlargement of 3C-SiC domains along the step-flow direction is outlined. Growth process stability and reproducibility of high crystalline quality material are demonstrated in a series of 3C-SiC samples with a thickness of about 1 mm. The average values of full width at half-maximum of ω rocking curves on these samples vary from 34 to 48 arcsec indicating high crystalline quality compared to values found in the literature. The low temperature photoluminescence measurements also confirm a high crystalline quality of 3C-SiC and indicate that the residual nitrogen concentration is about 1-2×10 16 cm -3 . Such 3C-SiC growth concept may be applied to produce substrates for homoepitaxial 3C-SiC growth or seeds which could be explored in bulk growth of 3C-SiC.

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Section: Introductionmentioning

confidence: 99%

“…It is very attractive for the development of metal-oxide semiconductor field-effect transistors for medium power devices, , high efficiency solar cells, , biocompatible medical devices, or biomarkers . Furthermore, it is a suitable substrate for the growth of nitride and epitaxial graphene layers. , …”

Section: Introductionmentioning

confidence: 99%

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2014

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…Among the various possible crystalline structures of SiC, also known as polytypes, cubic SiC phase (3C-SiC or b-SiC) is of particular importance owing to its high mobility (1000 cm 2 /Vs), electron saturation drift velocity (2.2 · 10 7 cm/s), high resistance to oxidation, high thermal conductivity and low expansion coefficient. It is also among the most suitable substrate materials for GaN heteroepitaxy [6,7]. Because of the facts that b-SiC wafers are very costly and limited in availability, and to combine the benefits of the extraordinary physical properties of SiC with the welldeveloped silicon-based technologies, it is necessary to explore heteroepitaxial growth of b-SiC on Si substrates.…”

Section: Introductionmentioning

confidence: 99%