Evaluation of SiO<sub>2</sub>Films and SiO<sub>2</sub>/Si Interfaces by Graded Etching

Muraji, Yuichi; Yoshikawa, Kunio; Nakamura, Masakazu; Nakagawa, Y.

doi:10.1143/jjap.41.805

Cited by 6 publications

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“…The XPS measurements were obtained using ESCALAB220iXL (VG) with monochromatic AlKa as an excitation source (h ¼ 1486.6 eV). 19 A hemispherical electron analyzer was operated in fixed analyzer transmission (FAT) mode by selecting a constant pass energy of 30 eV throughout the measurements. The N1s core level was studied.…”

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confidence: 99%

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Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Yoshikawa¹,

Ogawa²,

Inoue³

et al. 2012

Applied Physics Letters

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We measured cathodoluminescence (CL) spectra of SiO2 films grown on 4H-SiC wafers and found that for an acceleration voltage of 5 kV, CL peaks at 460 and 490 nm, assigned to oxygen vacancy centers (OVCs), become weak by post-oxidation annealing in N2O ambient at 1300 °C whereas the CL peak around 580 nm, related to Si-N bonding structures, becomes intense. Furthermore, the peak assigned to N-Si3 configurations in x-ray photoelectron spectroscopy (XPS) spectra was observed in the SiO2/SiC interface in only samples annealed in N2O ambient. These results suggest that the interface trap densities decrease and the channel mobility in n-type MOS capacitors increases by the termination of dangling bonds by the N atom in the SiO2/SiC interface. CL spectroscopy and XPS provide us with extensive information on OVCs and dangling bonds in the SiO2/SiC interface on the 4H-SiC substrate.

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“…1. 19 Figures 2(a) and 2(b) shows the CL spectra of the samples measured at acceleration voltages of 3 and 5 kV, respectively. CL peaks were observed at 460, 490, and 660 nm for the SiO 2 films on the 4H-SiC substrate.…”

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confidence: 99%

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Yoshikawa¹,

Ogawa²,

Inoue³

et al. 2012

Applied Physics Letters

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“…The R ms values of samples A, B, C and D are 0.29, 0.75, 0.62 and 0.27 nm, respectively. The surface roughness [11,12] of the films in the present study appears to increase with increasing the thickness of the films. Fig.…”

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confidence: 46%

Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas

Honda

Takei

Ohno

et al. 2005

Journal of Luminescence

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“…For the detection of oxygen,O − was not adopted because the intensity was too high for detections to be carried out correctly. Inversely, the O − and SiO − intensities seemed to be deficient for this experiment. All measurements were performed in the high mass resolution mode.…”

Section: Methodsmentioning

confidence: 99%

Optimization of the depth resolution for profiling SiO₂/SiC interfaces by dual‐beam TOF‐SIMS combined with etching

Sameshima

Takenaka

Muraji

et al. 2019

Surface & Interface Analysis

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To examine precise depth profiles at the interface of SiO2/SiC, a high resolution that can detect slight discrepancies in the distribution is needed. In this study, an experimental method to achieve a high resolution of less than 1 nm was developed by using dual‐beam time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). The analysis was preceded by the following three steps: (1) determination of the optimal analytical conditions of the analysis beam (Bi+) and sputtering beam (Cs+), (2) verification of the etching methods to thin the SiO2 layer, and (3) confirmation of the benefits of the low‐energy sputtering beam directed toward SiO2/SiC samples. By using the secondary ion intensity peak‐to‐valley ratio of BN− and BO− of a sample with delta‐doped boron multilayers, the appropriate Bi+/Cs+ condition for a high depth resolution was determined for each energy level of the sputtering beam. Upon verification of the etching methods to thin the SiO2 layer, slight discrepancies were found between samples that were obtained with different etching methods. The difference in the roughness values of the etched surfaces was proactively utilized for the performance confirmation of the low‐energy sputtering beam by means of precise observation of the profiles at the SiO2/SiC interface. The use of a Cs beam with a low energy between 0.25 and 0.5 keV enabled the detection of slight discrepancies in the roughness of less than 1 nm between samples. The aforementioned method has the potential to accurately detect discrepancies in the intrinsic distribution at the SiO2/SiC interface among samples.

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Evaluation of SiO₂Films and SiO₂/Si Interfaces by Graded Etching

Cited by 6 publications

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Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas

Optimization of the depth resolution for profiling SiO₂/SiC interfaces by dual‐beam TOF‐SIMS combined with etching

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Evaluation of SiO2Films and SiO2/Si Interfaces by Graded Etching

Cited by 6 publications

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Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas

Optimization of the depth resolution for profiling SiO2/SiC interfaces by dual‐beam TOF‐SIMS combined with etching

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Evaluation of SiO₂Films and SiO₂/Si Interfaces by Graded Etching

Optimization of the depth resolution for profiling SiO₂/SiC interfaces by dual‐beam TOF‐SIMS combined with etching