Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology

Malass, Imane; Uhring, Wilfried; Normand, Jean-Pierre Le; Dumas, Norbert; Dadouche, Foudil

doi:10.1007/s10470-016-0763-8

Cited by 6 publications

(8 citation statements)

References 20 publications

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“…Work in [33] reports similar DCR to the DCR value of our SPAD with a reduced PDP peak value. Our SPAD compared to the other works in the 180 nm node [35], [42] shows a higher PDP peak at a lower DCR value.…”

Section: B Photon Detection Probabilitysupporting

confidence: 74%

“…It can be noted that the 480 nm peak reduces to 55% when the DUT was operated at 4 V and to 48% at 3 V whilst it drastically reduces to 32% at 2 V. The reported curve is the average of two measurements and the error bars show the range of measurement. PDP is a function of doping levels, noise, excess bias and active area [33], therefore the obtained PDP is achieved thanks to the low noise of device, compared to other 180 nm HV SPADs which will have comparable doping levels, and a larger active area in lieu of the square shape. Fig.…”

Section: B Photon Detection Probabilitymentioning

confidence: 97%

“…the-art comparison in terms of DCR against PDP peak [22], [30], [31], [33]- [51], with diamond symbols denoting works in 180 nm lithography nodes and circle symbols for all the other nodes. For each symbol the corresponding reference number is inside the symbol (where possible).…”

Section: B Photon Detection Probabilitymentioning

confidence: 99%

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A $64\times64$ SPAD Array for Portable Colorimetric Sensing, Fluorescence and X-Ray Imaging

et al. 2019

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We present the design and application of a 64 × 64 pixel SPAD array to portable colorimetric sensing, and fluorescence and x-ray imaging. The device was fabricated on an unmodified 180 nm CMOS process and is based on a square p+/n active junction SPAD geometry suitable for detecting green fluorescence emission. The stand-alone SPAD shows a photodetection probability greater than 60% at 5 V excess bias, with a dark count rate of less than 4 cps/µm 2 and sub-ns timing jitter performance. It has a global shutter with an in-pixel 8-bit counter; four 5-bit decoders and two 64-to-1 multiplexer blocks allow the data to be read-out. The array of sensors was able to detect fluorescence from a fluorescein isothiocyanate (FITC) solution down to a concentration of 900 pM with an SNR of 9.8 dB. A colorimetric assay was performed on top of the sensor array with a limit of quantification of 3.1 µm. X-rays images, using energies ranging from 10 kVp to 100 kVp, of a lead grating mask were acquired without using a scintillation crystal.

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Section: B Photon Detection Probabilitysupporting

confidence: 74%

Section: B Photon Detection Probabilitymentioning

confidence: 97%

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A $64\times64$ SPAD Array for Portable Colorimetric Sensing, Fluorescence and X-Ray Imaging

et al. 2019

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“…1(a), a typical shallow P+/N-well junction structure is used to illustrate the modeling method of timing jitter. This SPAD device mainly consists of a P+ implantation layer and an N-well that form a shallow depletion region and two neutral regions [15]. Under the excess bias state, once the photons are incident onto these three regions, the photonic carriers will be produced and spread over the entire detection area, as shown in Fig.…”

Section: Physical Mechanism Of Photon Detectionmentioning

confidence: 99%

“…To validate the proposed model, the analytical results are compared with the reported measured data [20]. Although the compared SPAD device is fabricated in a different 0.18 µm standard CMOS technology [15], [20], it has the same P+/N-well structure (see Fig. 1(a)) and the same active diameter with our modeling device.…”

Section: Excessive Voltagementioning

confidence: 99%

A Simple Analytic Modeling Method for SPAD Timing Jitter Prediction

Sun

et al. 2019

IEEE J. Electron Devices Soc.

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Timing jitter as a key performance of single-photon avalanche diode (SPAD) detectors plays a significant role in determining the fast temporal response behavior of the SPAD device. Nevertheless, few analytic models are developed to directly calculate the characteristic of timing jitter for its modeling difficulty. In this paper, we propose a simple analytic modeling method, which can predict the temporal response of SPADs, without using time-consuming Monte Carlo simulation. Model investigation incorporates avalanche current, avalanche buildup time, and jitter tail under different conditions. Furthermore, the key model parameters provided by Geiger mode technology computer-aided design simulation allow an accurate prediction on timing jitter. Analytical results indicate that for an SPAD device structure with a shallow P+/N-well junction in a 0.18-μm CMOS technology, the Gaussian peak response with about 110-ps full-width at half-maximum and the exponential jitter tail are in good agreement with the measured data, validating the accuracy, and feasibility of this modeling method. INDEX TERMS Single photon avalanche diodes (SPADs), timing jitter, analytic model, jitter tail.

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A Compact Analog Histogramming SPAD-Based CMOS Chip for Time-Resolved Fluorescence

Diéguez

Canals

Franch

et al. 2019

IEEE Trans. Biomed. Circuits Syst.

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Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology

Cited by 6 publications

References 20 publications

A $64\times64$ SPAD Array for Portable Colorimetric Sensing, Fluorescence and X-Ray Imaging

A $64\times64$ SPAD Array for Portable Colorimetric Sensing, Fluorescence and X-Ray Imaging

A Simple Analytic Modeling Method for SPAD Timing Jitter Prediction

A Compact Analog Histogramming SPAD-Based CMOS Chip for Time-Resolved Fluorescence

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