2014
DOI: 10.1134/s1063739714010028
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Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron silicon n-channel MOS transistor

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Cited by 4 publications
(14 citation statements)
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“…where We intensively use indexing of various mathematical objects by points n = (n 1 , n 2 , n 3 , n 4 ) of the integer lattice L. The sequential numbering of these points, based on the use of g 4d (n), drastically simplifies both numerical implementation of the presented techniques and analysis of solutions, because it takes into account the specific Fourier spectra of the electromagnetic lattice and the wave function, as well the structure of the finite models described below and in more detail in [12]. It is well known, e.g., see Ref.…”
Section: A Matrix Formmentioning
confidence: 99%
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“…where We intensively use indexing of various mathematical objects by points n = (n 1 , n 2 , n 3 , n 4 ) of the integer lattice L. The sequential numbering of these points, based on the use of g 4d (n), drastically simplifies both numerical implementation of the presented techniques and analysis of solutions, because it takes into account the specific Fourier spectra of the electromagnetic lattice and the wave function, as well the structure of the finite models described below and in more detail in [12]. It is well known, e.g., see Ref.…”
Section: A Matrix Formmentioning
confidence: 99%
“…In appendix, we present a specific numeration of these basis matrices Γ k , k = 0, ..., 15, which makes it possible, in particular, to reconstruct any matrix Γ k from its number k, see Ref. [11]. Any 4 × 4 matrix V = 15 k=0 V k Γ k is uniquely defined by the set of its components D s (V ) = {V k } in the Dirac basis [Dirac set of matrix V , briefly, Dset of V ].…”
Section: A Matrix Formmentioning
confidence: 99%
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