Evaluation of the tunnelling current assisted by deep traps in schottky barriers

Sarrabayrouse, G.; Buxo, J.; Myszkowski, Andrzej; Estève, D.

doi:10.1051/rphysap:01977001202043300

Cited by 9 publications

(5 citation statements)

References 7 publications

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“…The deep levels within the bandgap in semiconductors play a fundamental role in every optoelectronic device: they affect the non-radiative recombination rate [13,14]; they assist tunneling processes relevant in Schottky barrier diodes (SBDs) [15] and heterostructure-based LEDs thus contributing to a reduction of the efficiency; and they favor parasitic emission processes [16].…”

Section: Introductionmentioning

confidence: 99%

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Fregolent¹,

Buffolo²,

Santi³

et al. 2021

J. Phys. D: Appl. Phys.

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Dilute bismides (%Bi ∼ 1%-3%) are excellent candidates for the fabrication of optoelectronic devices, thanks to the strong reduction in the bandgap with increasing bismuth content, the weak temperature dependence of the bandgap, and the small Auger recombination coefficient for high bismuth concentrations. Since Shockley-Read-Hall recombination may significant impact on the electrical and optical properties of the devices, describing the defects within the semiconductor material is of paramount importance for the optimization of device technology. To this aim, this paper investigates the deep levels within the bandgap in un-annealed n-type GaAsBi grown by molecular beam epitaxy at low temperature (390 • C) by means of deep level transient spectroscopy and filling time-dependent measurements. The original results described in the paper indicate (a) the presence of four majority and two minority carrier traps, and (b) that, from the analysis of the charge-capture kinetics, the dominant electron and hole traps originate, respectively, from a dislocation-related and a point defect with capture barrier of 0.48 eV. In addition, (c) we demonstrate that the incorporation of bismuth in GaAs generates only one additional electrically active defect with concentration higher than the sensitivity of the measurement setup, because most of the relevant traps found in GaAsBi layers have been identified in pure GaAs grown at low temperature. Finally, (d) the trap concentration is relatively constant along the growth direction, indicating a uniform defect density.

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Section: Introductionmentioning

confidence: 99%

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Fregolent¹,

Buffolo²,

Santi³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Introduction. -The role that impurities play in tunneling effects in barriers has been discussed by a number of authors [1][2][3][4][5][6][7][8][9][10]. In the case of Schottky barriers two main effects have been distinguished :…”

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confidence: 99%

“…ii) The impurity levels resonate with electrons in both the metal and the semiconductor; this effect also causes an enhancement of the tunneling mechanism [2][3][4][5][6][7]. In an earlier paper [9] the resonant tunneling problem was tackled. by applying a pheriomenological formalism analogous to that of Hall-Schockley and Read, first applied by G. H. Parker and C. A. Mead [6] to the case of tunneling through traps.…”

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confidence: 99%

“…In order to evaluate T(E, k) completely we still have to get an expression for r. As explained before this will be determined by the transition probabilities of the trapped electron tùwards the electrodes. In [9] we justified the use of the transfer Hamiltonian method in the case of a transition connecting the trap to the continuous spectrum. The transition probability, either TL or TR is : in which L and R respectively stand for the left and the right électrode, an ) stands for the state density in the ' DE k k y electrode at energy E and for a constant transverse moment component ; t/J'3(r) represents the electron wave in any one of the two electrodes.…”

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confidence: 99%

“…After integrating over k in (9) the current density is given by : It appears that the current going through the barrier at energy E shows a sharp maximum for E = Eo'.…”

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confidence: 99%

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Resonant tunneling through traps in Schottky barriers

1977

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Resonant tunnelling in thermally degenerated molybdenum and platinum silicon Schottky diodes

Martinez

Calleja

Piqueras

1980

Phys. Stat. Sol. (a)

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Evaluation of the tunnelling current assisted by deep traps in schottky barriers

Abstract: Using the results of I. Lundström and C. Swensson for the tunneling capture cross-section of deep traps, the authors present a theoretical approach for accurately evaluating the tunneling current assisted by deep traps in Schottky diodes

Cited by 9 publications

References 7 publications

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Resonant tunneling through traps in Schottky barriers

Resonant tunnelling in thermally degenerated molybdenum and platinum silicon Schottky diodes

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