Evidence for a Composite Interface State Generation Mode in the CHE-Stressed Deep-Submicrometer n-MOSFET

Ang, Diing Shenp; Liao, Hong; Phua, T.W.H.; Ling, C.H.

doi:10.1109/ted.2004.838447

Cited by 6 publications

(1 citation statement)

References 13 publications

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“…In 2003, Ang et al reported an experimental evidence based on modulating the concentration of the high-energy tail of the electron energy distribution function[47] via the application of a reverse-biased V b during hot-carrier stress. It is revealed that the shift in the worse-case stress condition from V g ~ V d /2 towards V d should be mainly caused by the increased injection of the 'high-energy tail' electrons into the gate oxide as V g approaches V d. Generation of those hot electrons occurs through non-local effect, such as electron-electron scattering, or impact ionization feedback[48].…”

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confidence: 99%

Impact of channel engineering on hot-electron injection in the deep-submicrometer flash memory cell

Zhang¹

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First and foremost, I would like to express my deepest gratitude to my project supervisor, Dr. Ang Diing Shenp, for his patient guidance, invaluable advice, persistent support and encouragement throughout the entire course of the project, without which the completion of the project would not have been possible. His devotion and determination towards scientific research have greatly inspired me to strive not only for the research project but also for my professional career in future. I also wish to offer my sincere thanks to Mr. Tan Kok Tong, the project co-supervisor in Systems on Silicon Manufacturing Company (SSMC) Pte. Ltd, for giving me this great opportunity to pursue a higher degree in the field of advanced semiconductor technology. Special appreciation goes to my SSMC mentor, Mr. Kuan Hing Poh, who had given me very helpful suggestions and willingly shared his knowledge on Flash memory technology. I am also grateful to Mr. Glen Foo and Mr. Derek Sim, for the enlightening discussion we had as well as their kindness in sharing the testing machine with me. In addition, I am indebted to my family members, especially my parents and grandparents, for their continuous love and moral support all along. I also want to take this opportunity to thank my dearest Tony for his great understanding as well as encouragement during the course of the project. Last but not least, I would like to extent my sincere thanks to all my colleagues in the Sensors & Actuators Lab II (NTU), as well as the engineers in the Section of Failure Analysis and Reliability (SSMC), for their help in making this project successful. Finally, I am grateful to SSMC for providing the research scholarship and the test devices used in this research project.

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confidence: 99%