Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Michl, Jakob; Grill, Alexander; Stampfer, Bernhard; Waldhoer, Dominic; Schleich, Christian; Knobloch, Theresia; Ioannidis, Eleftherios; Enichlmair, H.; Minixhofer, R.; Kaczer, B.; Parvais, B.; Govoreanu, B.; Radu, Iuliana; Waltl, Michael

doi:10.1109/iedm19574.2021.9720501

Cited by 13 publications

(7 citation statements)

References 10 publications

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“…The measurements refer to a foundry 28nm pMOS at I D ≈ 30 nA (≈200 mV below the threshold at 4 K). A similar RTN behavior is reported in [27] where it is shown that the capture/emission times of traps become independent of T at cryogenic temperatures (in line with Fig. 14).…”

Section: E Rtn Measurements In Subthresholdsupporting

confidence: 89%

“…where z is the direction perpendicular to the channel and τ is the trapping/de-trapping time implemented according to the nonradiative multiphonon (NMP) model with correction for cryogenic temperatures [23], [27]. Notice that τ increases exponentially with z due to electron tunneling from the ARE FROM [23] AND [27] channel into the dielectric. When the traps are in the channel, there is no electron tunneling barrier to reach the defects and therefore τ is smaller compared to the case of dielectric traps.…”

Section: Relationship Between Band Tail States and 1/f Noisementioning

confidence: 99%

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Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Asanovski

Grill

Franco

et al. 2023

IEEE Trans. Electron Devices

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Characterization, modeling, and development of cryo-temperature CMOS technologies (cryo-CMOS) have significantly progressed to help overcome the interconnection bottleneck between qubits and the readout interface in quantum computers. Nevertheless, available compact models still fail to predict the deviation of 1/f noise from the expected linear scaling with temperature (T ), referred to as "excess 1/f noise," observed at cryogenic temperatures. In addition, 1/f noise represents one of the main limiting factors for the decoherence time of qubits. In this article, we extensively characterize low-frequency noise on commercial 28-nm CMOS and on research-grade Ge-channel MOSFETs at temperatures ranging from 370 K down to 4 K. Our investigations exclude electron heating and bulk dielectric defects as possible causes of the excess 1/f noise at low temperatures. We show further evidence for a strong correlation between the excess 1/f noise and the saturation of the subthreshold swing (SS) observed at low temperatures. The most plausible cause of the excess noise is found in band tail states in the channel acting as additional capture/emission centers at cryogenic temperatures.

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Section: E Rtn Measurements In Subthresholdsupporting

confidence: 89%

Section: Relationship Between Band Tail States and 1/f Noisementioning

confidence: 99%

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Asanovski

Grill

Franco

et al. 2023

IEEE Trans. Electron Devices

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“…The vibrational wave functions of the two involved defect configurations can overlap not only at but also below the intersection point of the two parabolas, as shown in Figure a. These overlaps allow the system to transition at an effectively lower barrier, a phenomenon that is termed “nuclear tunneling”. , To model the charge transfer rates at cryogenic temperatures, the line shape function as given in eq is evaluated for the two harmonic defect states, as governed by the properties of the two parabolas in Figure a. First, they depend on the shift of the parabola of charged state E T as a function of gate bias V BG .…”

Section: Characterization Of Mocvd-grown Monolayer Mos2 Filmsmentioning

confidence: 99%

Observation of Rich Defect Dynamics in Monolayer MoS₂

et al. 2023

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Defects play a pivotal role in limiting the performance and reliability of nanoscale devices. Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors such as monolayer MoS 2 are no exception. Probing defect dynamics in 2D FETs is therefore of significant interest. Here, we present a comprehensive insight into various defect dynamics observed in monolayer MoS 2 FETs at varying gate biases and temperatures. The measured sourceto-drain currents exhibit random telegraph signals (RTS) owing to the transfer of charges between the semiconducting channel and individual defects. Based on the modeled temperature and gate bias dependence, oxygen vacancies or aluminum interstitials are probable defect candidates. Several types of RTSs are observed including anomalous RTS and giant RTS indicating local current crowding effects and rich defect dynamics in monolayer MoS 2 FETs. This study explores defect dynamics in large area-grown monolayer MoS 2 with ALD-grown Al 2 O 3 as the gate dielectric. KEYWORDS: random telegraph signals, MoS 2 , Al 2 O 3 , defects, field-effect transistors, charge trapping, reliability

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“…With the scaling down and utilization of high-k metal gates (HKMGs) in metal-oxide-semiconductor field-effect transistors (MOSFETs), the occurrence of random telegraph noise (RTN), especially the generation of random telegraph signals (RTSs), is becoming a critical reliability problem in analog integrated circuits (ICs), digital ICs, and the memories due to the shift in threshold voltage from the capture and emission of carriers by traps inside the gate oxide [ 1 , 2 , 3 , 4 , 5 ]. Moreover, RTN is also a severe reliability problem in cryogenic quantum computing applications [ 6 ]. The integrated quantum processor, which contains quantum bits (q-bits) and peripheral circuits, operates at cryogenic temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…Besides, RTN can also cause reliability problems in other applications whose peripheral circuits are based on MOSFETs, such as the two-dimensional material-based applications [ 7 , 8 , 9 , 10 ]. Past research studying the mechanism of RTN on cryogenic bulk MOSFETs has already been presented, where primarily, the properties of RTN, such as time constants and trap depth, have been discussed [ 6 , 11 , 12 ]. However, the mechanism of RTN in the cryogenic fully depleted silicon-on-insulator (FDSOI) MOSFET, especially the relationship between the time constant, trap energy, and trap depth, is hardly mentioned in recent works.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

Wang

et al. 2022

Nanomaterials

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In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-based transistors. In this paper, the mechanism of RTN in a 22-nm FDSOI-based metal–oxide–semiconductor field-effect transistor (MOSFET) is discussed, and an improved approach to analyzing the relationship between the RTN time constants, the trap energy, and the trap depth of the device at cryogenic temperatures is proposed. The cryogenic measurements of RTN in a 22-nm FDSOI-based MOSFET were carried out and analyzed using the improved approach. In this approach, the quantum mechanical effects and diffuse scattering of electrons at the oxide–silicon interface are considered, and the slope of the trap potential determined by the gate voltage relation is assumed to decrease proportionally with temperature as a result of the electron distribution inside the top silicon, per the technology computer-aided design (TCAD) simulations. The fitted results of the improved approach have good consistency with the measured curves at cryogenic temperatures from 10 K to 100 K. The fitted trap depth was 0.13 nm, and the decrease in the fitted correction coefficient of the electron distribution proportionally with temperature is consistent with the aforementioned assumption.

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Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Cited by 13 publications

References 10 publications

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Observation of Rich Defect Dynamics in Monolayer MoS₂

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

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Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Cited by 13 publications

References 10 publications

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Observation of Rich Defect Dynamics in Monolayer MoS2

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

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Observation of Rich Defect Dynamics in Monolayer MoS₂