Evolution of chemical, structural, and mechanical properties of titanium nitride thin films deposited under different nitrogen partial pressure

Qi, Runze; Pan, Liuyang; Feng, Yufei; Wu, Jiali; Li, Wenbin; Wang, Zhanshan

doi:10.1016/j.rinp.2020.103416

Cited by 23 publications

(18 citation statements)

References 24 publications

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“…From a general perspective, these results allow us to modify the film structures by changing the N 2 gas flow, which will modify the mechanical properties as discussed below. Our structural findings are in complete accordance with the one observed in the literature, in which the Ti and TiN films are studied [ 25 , 26 ].…”

Section: Resultssupporting

confidence: 91%

Structural, Mechanical, and Decorative Properties of Sputtered TiN and Ti (N, C) Films for Orthodontic Applications; an In Vitro Study

et al. 2021

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In this paper, we explore and modify the structural, mechanical, and decorative properties of films composed by TiN and Ti (N, C) with a wide range of N2 gas flow during the deposition in order to be used on orthodontic systems. The films were grown using reactive DC magnetron sputtering from a pure Ti target and customized with C pellets onto Si and stainless steel 316L substrates. The structural properties were studied using X-ray diffraction and scanning electron microscopy, while the mechanical ones were obtained through hardness, elastic modulus, and friction coefficient. Moreover, the wear rate has been measured under an artificial saliva medium to simulate the oral cavity. The color of the films deposited onto stainless steel 316 L substrate was characterized through CIELab color code. Our findings show that the addition of N2 and C in the Ti matrix improves the mechanical properties of the films. With the increase in the amount of N2 and C, the hardness reaches a value of 739 HV, higher than the one reported in the literature (600 HV), a low value of the coefficient of elasticity (8.0 GPa), and also a low friction coefficient (0.30). Moreover, with the addition of N2 and C in the Ti films, the color of the films changes from metallic aspect until “with” gold, which means that our coatings exhibit versatile mechanical and color characteristics to be used in orthodontic wires applications.

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Section: Resultssupporting

confidence: 91%

Structural, Mechanical, and Decorative Properties of Sputtered TiN and Ti (N, C) Films for Orthodontic Applications; an In Vitro Study

et al. 2021

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“…[38,39] Moreover, TiN possesses a cubic crystalline lattice similar to that of CdZnTe. [40][41][42] A high ionizing radiation resistance of TiN was reported in several recent experimental works. [43][44][45][46] The heterojunction photodiode device concept opens a broad range of possibilities in combining different semiconductor materials with unique properties resulting in additional functionalities, but with a price of reduced detectivity and response time.…”

Section: Introductionmentioning

confidence: 91%

“…[ 38,39 ] Moreover, TiN possesses a cubic crystalline lattice similar to that of CdZnTe. [ 40–42 ] A high ionizing radiation resistance of TiN was reported in several recent experimental works. [ 43–46 ]…”

Section: Introductionmentioning

confidence: 99%

A High‐Detectivity, Fast‐Response, and Radiation‐Resistant TiN/CdZnTe Heterojunction Photodiode

Solovan

Mostovyi

Parkhomenko

et al. 2022

Advanced Optical Materials

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Silicon is the most commonly employed optoelectronic material, thanks to its high performance, long lifetime, and economic viability. [7,8] However, some fields of photodiodes' possible applications require additional features besides the excellent performance characteristics provided by conventional silicon photodiodes. [9,10] Rapid development of commercial and scientific space programs and large-scale nuclear safety efforts in radioactively contaminated areas presupposes the development of next-generation radiation-resistant optoelectronic materials and devices. [11][12][13][14][15][16] It is known that wide bandgap II-VI compound semiconductors possess a noticeably higher radiation resistance compared to their established commercially available counterparts Ge, Si, and III-V compounds. [17][18][19] For instance, the development of CdTe-base optoelectronic devices has been an active research field for years motivated by the demand for improved radiation hardness. [20][21][22][23] However, CdTe still exhibits only moderate radiation hardness that needs to be improved further to achieve reliable operation in harsh environments. [24,25] It has been shown that Cd 1−x Zn x Te solid solutions (also referred to as CdZnTe) possess much higher radiation resistance than CdTe. [26][27][28][29] As such, CdZnTe is commonly used as the active material for X-and γ-ray detectors. [30,31] The large A novel high-performance ultraviolet-visible-near-infrared (300-820 nm) heterojunction photodiode based on radiation-resistant semiconductor materials is proposed. A titanium nitride (TiN) "window" layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 10 12 proton cm −2 . This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments.

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“…The Ni layers were sputtered under a mixed gas atmosphere containing argon and nitrogen. In previous research (Qi et al, 2020), a proportion of 20% nitrogen showed a better performance on a Ti monolayer; therefore, to compare the effect of different nitrogen contents, the proportions of nitrogen were selected to be 12 and 20%. The Ti layers were sputtered in pure argon.…”

Section: Sample Preparationmentioning

confidence: 99%

Effect of the nitrogen content of sputtering gas during Ni deposition on Ni/Ti periodic multilayers and neutron supermirror performance

Zhang¹,

Zhong²,

Ni³

et al. 2023

J Appl Cryst

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Neutron supermirrors are indispensable in neutron research devices. Their performance has been improved using reactive magnetron sputtering. This study investigates the effects of nitrogen content in a mixed sputtering gas during Ni deposition. Ni/Ti periodic multilayers with different d spacings and neutron supermirrors with m = 3 were prepared under different nitrogen partial pressures. Comparison of samples prepared under two different nitrogen contents (12 and 20%) showed that the interfacial roughness and the internal stresses of the periodic multilayer films with 20% nitrogen were smaller, the interface diffusion of the supermirrors with 20% nitrogen decreased, and the interface became clearer and more organized. Furthermore, the neutron reflectivity of the Ni/Ti supermirrors deposited under 20% nitrogen was 0.89 at m = 3.05.

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Evolution of chemical, structural, and mechanical properties of titanium nitride thin films deposited under different nitrogen partial pressure

Cited by 23 publications

References 24 publications

Structural, Mechanical, and Decorative Properties of Sputtered TiN and Ti (N, C) Films for Orthodontic Applications; an In Vitro Study

Structural, Mechanical, and Decorative Properties of Sputtered TiN and Ti (N, C) Films for Orthodontic Applications; an In Vitro Study

A High‐Detectivity, Fast‐Response, and Radiation‐Resistant TiN/CdZnTe Heterojunction Photodiode

Effect of the nitrogen content of sputtering gas during Ni deposition on Ni/Ti periodic multilayers and neutron supermirror performance

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