Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Hou, Tuo Hung; Lin, Kuan Liang; Shieh, Jiann; Lin, Jun; Chou, Cheng Tung; Lee, Yao Jen

doi:10.1063/1.3565239

Cited by 48 publications

(37 citation statements)

References 12 publications

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“…This association could be explained by the local connections between the metallic filament strength and the amount of Ni required to diffuse out of the filamentary path for its rupture. These results are in agreement with recently published work on Ni/HfO 2 /Si capacitors [19], which revealed an association between the set and reset powers. The correlation between V reset and V set can be described by the Pearson coefficient (ρ), giving correlation values of ∼0.…”

Section: Methodssupporting

confidence: 95%

Analysis of the Switching Variability in <inline-formula> <tex-math notation="TeX">$\hbox{Ni/HfO}_{2}$</tex-math></inline-formula>-Based RRAM Devices

2014

IEEE Trans. Device Mater. Relib.

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In this letter, we focus on the cycle-to-cycle variability of the low resistive state in Ni/HfO 2 -based resistive switching structures. The results show that several discrete current levels can individually last hundreds of cycles. They are a result of the random nature of the reversible conductive path formation through percolation processes, which could be attributed to a different shape, size, or number of conductive filaments. After successive cycles, the same or new filaments will nucleate in the weaker zones of the dielectric. In addition, the switching voltages related to the creation and dissolution of localized conductive paths are found to be statistically associated.Index Terms-Conductive filament (CF), HfO 2 , Ni, resistive random access memory (RRAM), unipolar switching, variability.

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Section: Methodssupporting

confidence: 95%

Analysis of the Switching Variability in <inline-formula> <tex-math notation="TeX">$\hbox{Ni/HfO}_{2}$</tex-math></inline-formula>-Based RRAM Devices

2014

IEEE Trans. Device Mater. Relib.

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“…However, high RESET current (I RESET ) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2 /Si unipolar RRAM, fully compatible with the Si technology [4,5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET , low-power operation in the future high-density 1D1R array.…”

mentioning

confidence: 67%

“…X. A. Tran et al proposed that the formation of a NiO x interfacial layer between Ni and HfO 2 was responsible for the unipolar RS [7], while our group showed the formation of conical-shape Ni filaments through Ni electromigration into HfO 2 [4,5]. In this paper, various RRAM devices including bilayer and single-layer structures were compared.…”

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confidence: 89%

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Low-I<inf>RESET</inf> unipolar HfO<inf>2</inf> RRAM and tunable resistive-switching mode via interface engineering

Lin

Hou

Lee

et al. 2011

2011 International Semiconductor Device Research Symposium (ISDRS)

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Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F 2 cell size [3]. However, high RESET current (I RESET ) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2 /Si unipolar RRAM, fully compatible with the Si technology [4,5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET , low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al 2 O 3 between HfO 2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.After standard RCA clean and a rapid thermal oxidation at 500 °C for 10 s in ambient O 2 on p + -Si substrates, 10-nm HfO 2 , 10-nm HfO 2 /3-nm Al 2 O 3 , and 3-nm Al 2 O 3 were deposited as the RS layers. HfO 2 films were deposited by metal organic chemical vapor deposition at 500 °C using Hf(OtBu) 2 (mmp) 2 and O 2 as precursors, while Al 2 O 3 film was deposited using Al[OCH(CH 3 ) 2 ] 3 and O 2 as precursors. Ni top electrodes with a thickness of 100 nm and a diameter of 200 μm were defined by a shadow mask process. The devices were measured using an Agilent 4156B semiconductor parameter analyzer by applying voltage on the top electrodes while the p + -silicon substrates (bottom electrodes) were grounded.The TEM image in Fig. 1 displays that as-deposited 10-nm HfO 2 was partially crystallized with an interfacial layer between Si and HfO 2 . The Ni/HfO 2 /Si device exhibits nonpolar RS behavior in Fig. 2, where unipolar and bipolar RS by any polarities of SET and RESET voltage were present. The compliance current at SET determined the SET power, the filament morphology, and thus the I RESET [5], as shown in Fig. 3. I RESET was scaled linearly with the compliance current from 1 mA to 100 μA, but saturated between 100 μA and 10 μA because of the charge dissipation current from parasitic capacitors [6]. With a low compliance current of 10 μA at SET, unipolar RS with 80 μA I RESET is depicted in Fig. 4. Figure 5 and Fig. 6 display the statistical distribution of switching voltages and resistance at high/low resistance states under lowpower operation. Very reproducible unipolar RS with stable I RESET below 100 μA, non-overlapped SET/RESET voltage window, and a reasonable resistance ratio of ~ 100 was promising for future high-density 1D1R memory array. Data retention characteristics are presented in Fig. 7. Both high/low resistance states were stable at 85 ℃ for at least 12000s, even when the filament size scaled with I RESET to nanoscale [5]...

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“…This I-V curve exhibits the characteristics of the trap-controlled space-charge-limited conducting mechanism, and the dominating trap sites are oxygen vacancies. [25][26][27] After setting the device to LRS, the I-V relation in the reversed voltage sweep (from -0.5 V to -0.01 V) is linear, implying that the conducting filaments are formed. In the continued voltage sweep from 0.01 V to 0.15 V, the device exhibits a linear I-V relation (Fig.…”

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confidence: 99%

Low-power resistive random access memory by confining the formation of conducting filaments

et al. 2016

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Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiOx/silver nanoparticles/TiOx/AlTiOx, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiOx layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

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Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Cited by 48 publications

References 12 publications

Analysis of the Switching Variability in <inline-formula> <tex-math notation="TeX">$\hbox{Ni/HfO}_{2}$</tex-math></inline-formula>-Based RRAM Devices

Analysis of the Switching Variability in <inline-formula> <tex-math notation="TeX">$\hbox{Ni/HfO}_{2}$</tex-math></inline-formula>-Based RRAM Devices

Low-I<inf>RESET</inf> unipolar HfO<inf>2</inf> RRAM and tunable resistive-switching mode via interface engineering

Low-power resistive random access memory by confining the formation of conducting filaments

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