Evolution of the microstructure of oxide thin films

Becht, M.; Wang, F.; Wen, Jianguo; Morishita, Tadataka

doi:10.1016/s0022-0248(96)00563-5

Cited by 32 publications

(21 citation statements)

References 8 publications

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“…Above that temperature, however, peaks became slightly broader again, and a slightly preferred (100) orientation developed. Similar observations have been reported for ceria thin films deposited by MOCVD, where the FWHM depended on film thickness and growth rate [34].…”

Section: Resultssupporting

confidence: 88%

Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate‐Temperature Solid Oxide Fuel Cells

et al. 2013

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Furthermore, deposition at such low temperatures is promising for processing of thin film assemblies.The preparation of bi‐layer electrolytes of yttria stabilized zirconia and gadolinia doped ceria thin films by aerosol assisted chemical vapor deposition is demonstrated. Gadolinia doped ceria films as thin as 150 nm are applied as barrier layers between yttria stabilized zirconia electrolyte and La0.6Sr0.4CoO3–δ cathode in anode supported solid oxide fuel cells. High power densities above 850 mW cm–2 at 650 °C are only obtained with these barrier layers, indicating that the GDC thin films effectively inhibit the formation of unwanted interface reactions.

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Section: Resultssupporting

confidence: 88%

Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate‐Temperature Solid Oxide Fuel Cells

et al. 2013

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“…3,6 As the streaking direction is perfectly parallel to ͓001͔, the defect plane is therefore perpendicular to ͓001͔. Two-component line shapes have been reported for a variety of epitaxial thin films, semiconductors, 32-34 metals, [35][36][37] and oxides, [38][39][40] and they are in general interpreted in terms of dislocations. Curved planar defects or planar defects inclined with respect to the surface would produce broadening of the reflection in the in-plane direction or inclined streaking, respectively.…”

Section: Methodsmentioning

confidence: 99%

Highly localized strain fields due to planar defects in epitaxial SrBi2Nb2O9 thin films

Boulle

Guinebretière

Dauger

2005

Journal of Applied Physics

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Articles you may be interested inDielectric characterization in a broad frequency and temperature range of Sr Bi 2 Nb 2 O 9 thin films grown on Pt electrodes Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi 2 Ta 2 O 9 thin films on SrTiO 3 substrates grown by pulsed laser deposition Influence of strain on microwave dielectric properties of ( Ba,Sr ) TiO 3 thin films

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“…For the film grown at 750 ºC it consists of two different components (see fig.1b). A sharp peak, which corresponds to an atomically long-range ordered area inside the film and a broad peak, which reflects a mosaic structure [26,[31][32][33][34][35]. As the growth temperature decreases, the sharp peak disappears and the width of the broad peak increases (Fig.…”

Section: Characterization and Dielectric Measurementsmentioning

confidence: 99%

Dielectric Properties of Strained Nickel Oxide Thin Films

Kashir

Jeong

Lee

et al. 2019

J. Korean Phys. Soc.

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The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant, and the more defective films, which were grown at low temperatures shows a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin films can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.

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Evolution of the microstructure of oxide thin films

Cited by 32 publications

References 8 publications

Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate‐Temperature Solid Oxide Fuel Cells

Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate‐Temperature Solid Oxide Fuel Cells

Highly localized strain fields due to planar defects in epitaxial SrBi2Nb2O9 thin films

Dielectric Properties of Strained Nickel Oxide Thin Films

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