2000
DOI: 10.1116/1.1321277
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Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors

Abstract: Articles you may be interested inTunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication J. Vac. Sci. Technol. B 22, 1723 (2004); 10.1116/1.1767824 50 nm InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors using double exposure at 50 kV electron-beam lithography without dielectric supportSimple and high-precision asymmetric gate-recess p… Show more

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Cited by 7 publications
(2 citation statements)
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“…With (1), the electron dose for a given exposure pattern along the axis can be computed. Although and can be determined using Monte-Carlo simulations [21], an experimental approach is preferred [19].…”
Section: B Ebl Simulation: Forward Solvermentioning
confidence: 99%
See 1 more Smart Citation
“…With (1), the electron dose for a given exposure pattern along the axis can be computed. Although and can be determined using Monte-Carlo simulations [21], an experimental approach is preferred [19].…”
Section: B Ebl Simulation: Forward Solvermentioning
confidence: 99%
“…The EBL system is a Raith150 system from Raith GmbH, Germany. For additional details on EBL and the technology, see[19] and[20].…”
mentioning
confidence: 99%