Exact analytical model of single electron transistor for practical IC design

Hasaneen, El-Sayed; Wahab, Mohd Nadhir Ab; Ahmed, Mohamed G.

doi:10.1016/j.microrel.2010.10.016

Cited by 9 publications

(1 citation statement)

References 16 publications

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“…We therefore need a good mathematical model of a single electron device for a simulation that overcomes two difficulties which is how to use a SET of higher voltage to compete with the analog circuit and to simulate SET with another solid state device to design hybrid circuits. Recently, two analytical models were developed for which is used for active IC formation MIB (17,18,19) and one for Uchida (20,21). However, retrieval with the Uchida model only works on a single gate symmetric device and cannot define a background charge effect and will be used for digital applications for supply voltage .…”

Section: Introductionmentioning

confidence: 99%

Transfer Characteristics Analysis of Single Electron Transistor

Mishra¹,

Gangwar²,

Kushwah³

et al. 2022

ECS Trans.

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Single Electron Transistor is often referred to as a nanometer scale because it can be made very small and can detect the movement of individual electrons. However, the SET has a high input impedance, low voltage gain, and is sensitive to random background charges. The Transfer characteristics features of a SET are calculated by analyzing the different resistance of the tunnels and the tunneling capacitance. Tunneling method is considering a stochastic process, and the state master equation is solving to calculate the free energy change. There are some unusual variations that set the limit for parallel circuit parameters for proper operation. The SET can maintain its scalability and control the movement of individual electrons. In this paper, we have provided a comparative and simulated study of standard CMOS device, SET and hybrid circuits such as a switched capacitor filter.

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