1992
DOI: 10.1116/1.578150
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Examination of the optimization of thin film transistor passivation with hydrogen electron cyclotron resonance plasmas

Abstract: Hydrogen plasmas generated by electron cyclotron resonance currently provide the most efficient plasma exposure technique available for passivating the grain boundaries of polycrystalline silicon. In this report, we show that careful optimization may be required when using this passivation approach on polycrystalline silicon gated, polycrystalline silicon thin film transistors fabricated using low temperature oxides. Optimization is found to be necessary for thin film transistors (TFTs) with polycrystalline Si… Show more

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Cited by 15 publications
(4 citation statements)
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“…Acceptable electrical performance of polysilicon thin film transistors ͑TFTs͒ for several applications, including driver circuitry for active matrix liquid crystal displays ͑AMLCD͒, requires the hydrogen passivation of defect sites in the polycrystalline silicon grain boundaries. 1,2 One of the most promising methods for passivation is exposure of the fabricated transistors to low pressure ͑Ͻ1 mTorr͒ hydrogen plasmas generated in an electron cyclotron resonance ͑ECR͒ source. However, ECR-based reactors may not be well suited for large area substrate processing under development for AMLCD flat panel displays.…”
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confidence: 99%
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“…Acceptable electrical performance of polysilicon thin film transistors ͑TFTs͒ for several applications, including driver circuitry for active matrix liquid crystal displays ͑AMLCD͒, requires the hydrogen passivation of defect sites in the polycrystalline silicon grain boundaries. 1,2 One of the most promising methods for passivation is exposure of the fabricated transistors to low pressure ͑Ͻ1 mTorr͒ hydrogen plasmas generated in an electron cyclotron resonance ͑ECR͒ source. However, ECR-based reactors may not be well suited for large area substrate processing under development for AMLCD flat panel displays.…”
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confidence: 99%
“…To investigate these mechanisms, we examine plasma conditions in a H 2 ECR discharge identical to that used in a study of polysilicon passivation, over a range of operating parameters over which passivation effectiveness was found to vary dramatically. 1 This study involves examination of the mass distribution and flux of ions, but not neutrals, incident on the substrate. There are practical reasons for studying only the ions, and it is believed that the ion data on its own provides substantial support for the significance of the role of atomic hydrogen.…”
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“…The performance of polysilicon TFTs is strongly influenced by the grain boundary and in-grain defects. Hydrogen passivation was used for reducing the density of these states [1], [2]. During hydrogenation, the rate of hydrogen introduced into the material depends on the ion density in the plasma.…”
Section: Introductionmentioning
confidence: 99%