Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators

Liao, Min; Ishiwara, Hiroshi; Ohmi, Shun–ichiro

doi:10.1109/ted.2013.2292904

Cited by 18 publications

(7 citation statements)

References 39 publications

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“…Traditionally the insulating dielectrics in OTFTs are conventional dielectrics (SiO 2 for example) with few exceptions, and yet they are usually of high operation voltage. − To reduce the operation voltage, high- k insulators have been employed to replace the SiO 2 layer so as to afford higher charge densities in OTFTs with low leakage current. Various high- k insulating oxide materials, polymer, and organic–inorganic multilayer dielectrics have been investigated. − Deposition methods include radio frequency sputtering,atomic layer deposition (ALD), electron beam evaporation, and wet chemical solution deposition . The operation voltages of the OTFTs have been much reduced, and yet the interfacial effects have been found to be rather complicated, coming from surface roughness, surface energy, surface polarity, dielectric constant, etc. − …”

Section: Introductionmentioning

confidence: 99%

“…Various high-k insulating oxide materials, polymer, and organic−inorganic multilayer dielectrics have been investigated. 12−14 Deposition methods include radio frequency sputtering, 15 atomic layer deposition (ALD), 16 electron beam evaporation, 17 and wet chemical solution deposition. 18 The operation voltages of the OTFTs have been much reduced, and yet the interfacial effects have been found to be rather complicated, coming from surface roughness, surface energy, surface polarity, dielectric constant, etc.…”

Section: Introductionmentioning

confidence: 99%

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Surface Modification on Solution Processable ZrO₂ High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Peng

et al. 2016

J. Phys. Chem. C

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High quality zirconium oxide (ZrO 2 ) high-k dielectrics have been fabricated by chemical solution processes. The ZrO 2 thin films annealed at various temperatures were studied from microstructure properties to electric properties in detail. The dielectric film annealed at 700 °C features a smooth surface, low leakage current density (1.89 × 10 −6 A/cm 2 @ −3 MV/cm) and high dielectric constant (20). Organic thin film transistors (OTFTs) based on ZrO 2 with different surface modifications were characterized to investigate the interfacial effects between the high-k dielectric and organic semiconductors. The OTFTs with poly(α-methylstyrene) (PαMS) coated ZrO 2 show much higher carrier mobility and on/off ratio than those with bare-ZrO 2 or with hexamethyldisilazane-treated ZrO 2 . The ZrO 2 /PαMS layers offer a low surface energy to grow large crystals and benefit the charge transport in organic semiconductors, whereas the dielectric surface roughness and dipole scattering are less important. The resulting OTFTs show high current on/off ratio (1.2 × 10 5 ), low threshold voltage (−0.38 V), and low SS (0.26 V/dec). Our work has deepened the understanding on the complex interfacial effects between high-k dielectric and organic semiconductor. Finally, we demonstrate low temperature fabrication of ZrO 2 -OTFTs on a flexible substrate, demonstrating solution processable high-k ZrO 2 dielectric films offer great potentials for low-cost organic electronic devices, especially for low voltage organic electronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface Modification on Solution Processable ZrO₂ High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Peng

et al. 2016

J. Phys. Chem. C

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“…We have reported various Hf-based high-k gate insulators and also in-situ formation of HfN x (x < 1:0) gate electrode on the Hf-based high-k gate insulator [10,11,12,13,14]. It was found that the in-situ formation of HfN x (x < 1:0) gate electrode improved the electrical characteristics of Hf-based high-k gate insulator [13].…”

Section: Introductionmentioning

confidence: 97%

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Ohmi

Liu

2015

IEICE Electron. Express

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Fully in-situ formation of Hf-based metal-oxide-nitride-oxidesilicon (MONOS) structures utilizing electron-cyclotron-resonance (ECR) plasma sputtering was investigated for the first time. It was found that the MONOS structures with in-situ formed HfN 0.5 gate electrode showed faster programing, high injection efficiency and larger flat-band voltage (V FB ) shift of 2.5 V compared to the MONOS structure with ex-situ formed Al gate electrode under programing voltage of 10 V. The retention characteristics of MONOS structure with in-situ formed HfN 0.5 gate electrode were also superior to the MONOS structure with ex-situ formed Al gate electrode. The degradation of retention for V FB shift after 60 min of programing was 40% for the MONOS structure with ex-situ formed Al gate electrode, while it was 16% for the MONOS structure with in-situ formed HfN gate electrode.

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“…Tantalum, like it's neighboring elements Hf and Zr, forms oxides with high‐κ values and is used extensively in capacitor devices, however, has not been explored as extensively in FETs. Although conventional methods for metal oxides, such as metal organic chemical vapor deposition, atomic layer deposition, and sputtering, guarantee high crystallinity and good electrical properties, they are cost‐ and time‐inefficient and may only be applied to limited‐area targets. Furthermore, high vacuums of less than 10 −7 Torr or high temperatures over 500 °C are necessary to grow films with reasonable thickness via these techniques.…”

Section: Introductionmentioning

confidence: 99%

Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric

Heo

Park

Kim

et al. 2018

Adv Funct Materials

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The development of solution-processed field effect transistors (FETs) based on organic and hybrid materials over the past two decades has demonstrated the incredible potential in these technologies. However, solution processed FETs generally require impracticably high voltages to switch on and off, which precludes their application in low-power devices and prevent their integration with standard logic circuitry. Here, a universal and environmentally benign solution-processing method for the preparation of Ta 2 O 5 , HfO 2 and ZrO 2 amorphous dielectric thin films is demonstrated. High mobility CdS FETs are fabricated on such high-κ dielectric substrates entirely via solution-processing. The highest mobility, 2.97 cm 2 V −1 s −1 is achieved in the device with Ta 2 O 5 dielectric with a low threshold voltage of 1.00 V, which is higher than the mobility of the reference CdS FET with SiO 2 dielectric with an order of magnitude decrease in threshold voltage as well. Because these FETs can be operated at less than 5 V, they may potentially be integrated with existing logic and display circuitry without significant signal amplification. This report demonstrates high-mobility FETs using solution-processed Ta 2 O 5 dielectrics with drastically reduced power consumption; ≈95% reduction compared to that of the device with a conventional SiO 2 gate dielectric.

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Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators

Cited by 18 publications

References 39 publications

Surface Modification on Solution Processable ZrO₂ High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Surface Modification on Solution Processable ZrO₂ High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric

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Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators

Cited by 18 publications

References 39 publications

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric

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Surface Modification on Solution Processable ZrO₂ High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Surface Modification on Solution Processable ZrO₂ High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors