Exciton hopping in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">In</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>multiple quantum wells

Kazlauskas, Karolis; Тамулайтис, Г.; Pobedinskas, Paulius; Žukauskas, A.; Spriņǵis, M.; Huang, Chi‐Feng; Cheng, Yung‐Chen; Yang, C. C.

doi:10.1103/physrevb.71.085306

Cited by 85 publications

(59 citation statements)

References 25 publications

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“…In the 1 Â 10 17 cm À3 doped structure, the BSF emission peak blueshifts by 8 meV as the temperature increases from 6 to 70 K. Above 70 K the peak energy redshifts due to the shrinkage of the bandgap. The initial blueshift is characteristic of a thermally activated shake-up process that redistributes the optically excited carriers from the most deeply localized states to shallower, higher energy states [5,6]. The magnitude of this blueshift and the temperature range over which it occurs are very similar to what has been reported in PL experiments on other nominally undoped a-plane templates and ELO structures [2,7].…”

Section: Experimental Techniquessupporting

confidence: 73%

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN

Badcock

Kappers

Moram

et al. 2011

Physica Status Solidi (b)

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The optical properties of Si-doped a-plane GaN epilayers grown on r-plane sapphire are studied. The low temperature emission is dominated by basal-plane stacking fault (BSF) recombination throughout the investigated doping range (1 Â 10 17 to 5 Â 10 19 cm À3 ). From temperature dependent photoluminescence (PL) measurements in conjunction with PL excitation studies, the carrier localization energy within the BSF is inferred to decrease from 17 meV to a negligible level as the doping density increases from 1 Â 10 17 to 5 Â 10 18 cm À3 . It is proposed that electrons, ionized from the Si-donor atoms at the growth temperature, are able to transfer to the BSFs, where they progressively fill the available density of localized states. For doping levels in excess of 1 Â 10 18 cm À3 , the luminescence linewidth broadens significantly and the luminescence transients decay with a single exponential time constant. This behaviour is attributed to the onset of band-filling which causes a marked increase in the free electron density within the BSFs.

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Section: Experimental Techniquessupporting

confidence: 73%

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN

Badcock

Kappers

Moram

et al. 2011

Physica Status Solidi (b)

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“…This increase of localized states with increasing content of alloyed atoms and dopants leads to an increase of Stokes' shift and broadening of the emission and absorption edges. 7,[9][10][11][12][13] These effects are observed in various structures such as quantum well structures, [14][15][16][17][18][19][20] quantum dot structures in alloyed semiconductors, 7,9,10 and heavily doped semiconductors. 12,13 In view of the structure and experimental results, the results in this investigation are closer to quantum dot model in alloyed semiconductors.…”

Section: ͑Ev͒ ͑1͒mentioning

confidence: 99%

Optical property and Stokes’ shift of Zn1−xCdxO thin films depending on Cd content

Kang

Kim

et al. 2006

Journal of Applied Physics

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“…Monte Carlo simulation of exciton hopping (solid lines in Fig. 2c) indicates small band potential roughness, σ, and dispersion in the average band gap energy, Γ , for the QWs (σ = 15 meV, Γ = 13 meV) and barriers (σ = 13 meV, Γ = 10 meV) as compared to InGaN MQWs grown by conventional metalorganic chemical vapor deposition (MOCVD) [10]. Thus, the compositional disorder revealed by low excitation PL and ODRC was found to be relatively low, which supports the above considerations on improved uniformity of the InGaN alloy obtained by homoepitaxial MBE growth.…”

Section: Resultsmentioning

confidence: 99%

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

et al. 2005

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We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.

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Exciton hopping inInxGa1−xNmultiple quantum wells

Cited by 85 publications

References 25 publications

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN

Optical property and Stokes’ shift of Zn1−xCdxO thin films depending on Cd content

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

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