Excitonic effects can lead to decreased intersubband oscillator strength

Mizel, Ari; Shtrichman, I.; Gershoni, D.

doi:10.1103/physrevb.65.235313

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…For these devices, large intersubband oscillator strength is often favorable. In this context, an applicable QW structure must possess an intersubband transition of desired energy and oscillator strength as large as possible 5. It is expected that these properties have to be strongly modified by the confining potential shape.…”

Section: Introductionmentioning

confidence: 99%

Laser field dependence of intersubband transition in inverse V‐shaped quantum wells

Burileanu

Niculescu

2011

Int J of Quantum Chemistry

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The electron energy levels and the envelope wave functions in inverse GaAs/AlGaAs V-shaped quantum wells (QWs) are calculated using the transfer matrix method. The influence of applied electric and laser fields on the electronic distribution is investigated. In studied systems, a laser-induced attenuation for anomalous electric polarization of the excited state is found. Also, an oscillator strength increasing under high-frequency laser radiation is obtained. The results presented in this article can be useful for novel device applications based on the intersubband transitions of electrons.

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Section: Introductionmentioning

confidence: 99%

Laser field dependence of intersubband transition in inverse V‐shaped quantum wells

Burileanu

Niculescu

2011

Int J of Quantum Chemistry

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“…11 However theoretical studies predict a reduction in oscillator strength for electronic intersubband transitions if the energy of one electron subband approaches the top of the well, and the effected is expected to be of relevance in the design of quantum well devices producing MIR. 15 The presence of holes in the valence bands as well as interband excitons should be more relevant in very small band gap materials, where both interband and some intersubband transition energies are comparable, and could both contribute to the far infrared spectrum. These issues will be addressed in future publications as discussed above, by considering an extended numerical inversion scheme that allows for Coulomb coupling between different transitions.…”

Section: Main Equationsmentioning

confidence: 99%

Interplay of Coulomb and nonparabolicity effects in the intersubband absorption of electrons and holes in quantum wells

Pereira

Wenzel

2004

Phys. Rev. B

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Quantum well intersubband absorption with contributions from both valence and conduction subbands is computed with a nonequilibrium Keldysh Green's function formalism, assuming an optical pump and probe scheme in undoped samples. The coupling between conduction and valence bands leads to contributions to the TE mode from the electrons, which are enhanced due to Coulomb corrections and may be resolved even in the presence of the dominating hole contributions. A strong contrast in the evolution of absorption spectra with increasing carrier density is predicted between TM and TE polarizations. The influence of strongly k-dependent dipole moments in combination with many-body effects is analyzed for intersubband transitions, including the evolution of the spectra with increasing excitation power. For the TE case, extra features appear in the spectra, due to interplays between band structure and Coulomb effects which are not present in the TM mode. The spectral evolution on both polarizations, broadening, number, and relative strength of the resolved peaks are in strong contrast with free-carrier results. Numerical results are given for four different structures.

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“…For these devices, large intersubband oscillator strength is often favorable. In this contest, an applicable QW structure must possess an intersubband transition of desired energy and oscillator strength as large as possible [21]. It is expected that these properties have to be strongly modified by the confining potential shape [22].…”

mentioning

confidence: 99%

Modifications of laser field assisted intersubband transitions in the coupled quantum wells due to static electric field

Prasad

Dahiya

2011

Physica Status Solidi (b)

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We consider the electron bound in the conduction band of a coupled asymmetric double quantum well (ADQW) interacting with static as well as strong monochromatic field in terahertz (THz) region. We use non-perturbative Floquet theory to study the static field and quantum well (QW) system in the presence of strong laser fields. We show that the intersubband dynamics gets modified due to the static field. The sensitivity to the ratio of strengths of static and laser field (E s /E 0 ) of the state populations can be used in various optoelectronic device applications.

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Excitonic effects can lead to decreased intersubband oscillator strength

Cited by 9 publications

References 27 publications

Laser field dependence of intersubband transition in inverse V‐shaped quantum wells

Laser field dependence of intersubband transition in inverse V‐shaped quantum wells

Interplay of Coulomb and nonparabolicity effects in the intersubband absorption of electrons and holes in quantum wells

Modifications of laser field assisted intersubband transitions in the coupled quantum wells due to static electric field

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