2006
DOI: 10.1016/j.tsf.2005.11.090
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Excitons in high-quality CuInS2 single crystals

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Cited by 15 publications
(12 citation statements)
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“…It is noteworthy that some of these PL lines were previously observed [11][12][13][14]. Experiments on both types of crystals confirmed that lines of free and bound excitons were shifted to high energy as the temperature rose from 4.2 to 78 K. In particular, the line of free A-excitons shifted in this temperature range by 1.8-2.0 meV, which agreed with the literature [8,9,11]. The physical reason for the energy increase of free excitons and, therefore, the CuInS 2 forbidden-band gap in the temperature range 4.2-78 K, is the anomalous temperature dependence of p-d-hybridization of orbitals in A I B III C 2 VI semiconductors.…”
supporting
confidence: 90%
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“…It is noteworthy that some of these PL lines were previously observed [11][12][13][14]. Experiments on both types of crystals confirmed that lines of free and bound excitons were shifted to high energy as the temperature rose from 4.2 to 78 K. In particular, the line of free A-excitons shifted in this temperature range by 1.8-2.0 meV, which agreed with the literature [8,9,11]. The physical reason for the energy increase of free excitons and, therefore, the CuInS 2 forbidden-band gap in the temperature range 4.2-78 K, is the anomalous temperature dependence of p-d-hybridization of orbitals in A I B III C 2 VI semiconductors.…”
supporting
confidence: 90%
“…Spectra at 78 K were dominated by a line with a maximum at 1.537 eV and half-width ≈8 meV that was related to recombination of free A-excitons in the ground state (n = 1). The low-energy inflection near 1.532 eV on the path of the line for free excitons was related to line 2 of bound excitons according to the literature [8][9][10]. A weaker high-energy line separated by 15.7-16.2 meV from the line for free A-excitons was due to recombination of free A-excitons located in the first (n = 2) and second (n = 3) excited states.…”
mentioning
confidence: 67%
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