Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector

Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Nguyen, Jean; Höglund, Linda; Keo, Sam A.; Mumolo, Jason M.; Gunapala, Sarath D.

doi:10.1063/1.4798551

Cited by 40 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, an imperfect barrier would also block minority carriers, resulting in higher than expected turn-on bias, as has been observed experimentally in both MWIR and LWIR devices [10,12,21]. Minority carrier blocking can be caused by (1) barrier doping, and/or (2) un-intended band offset between the barrier and the absorber.…”

Section: Minority Carrier Blocking Barriersmentioning

confidence: 89%

“…With the advent and the subsequent success of the nBn infrared detector [ 1 , 2 , 3 ], the unipolar barrier infrared photodetector architecture is now recognized as a highly effective platform for developing high-performance midwavelength infrared (MWIR) and long-wavelength infrared (LWIR) detectors, as exemplified by the barrier layer photoconductor and photodiode [4], the nBn [3,5], the XBn [6,7,8,9], the complementary barrier infrared detector (CBIRD) [10,11,12], the double heterostructure (DH) [13,14], and the pMp [15]. A unipolar barrier blocks one carrier type (electron or hole) but allow the unimpeded flow of the other; it is often used to inhibit the flow of majority carriers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Carrier transport in unipolar barrier infrared detectors

et al. 2015

Self Cite

View full text Add to dashboard Cite

We examine carrier transport in unipolar barrier infrared photodetectors and discuss aspects of barrier, contact, and absorber properties that can affect minority carrier collection. In a barrier infrared detector the unipolar barrier should block only the majority carriers while allowing the un-impeded flow of the minority carriers. Under the right conditions, unipolar barrier doping can reduce generation-recombination dark current without affecting minority carrier extraction. In an nBn structure, ideally with an electron unipolar barrier, improper barrier doping or barrier-absorber valence band offset could also block minority carriers and result in higher turn-on bias. We also examined the temperature-dependent turn-on bias in an n + Bn device and showed that observed behavior may be attributed to contact doping. Hole mobility in n-doped type-II superlattice (T2SL) is believed to be very low because of the extremely large effective mass along the growth direction. In practice MWIR and LWIR barrier infrared detectors with n-type T2SL absorbers have demonstrated good optical response. A closer inspection of the T2SL band structure offers a possible explanation as to why the hole mobility may not be as poor as suggested by the simple effective mass picture.

show abstract

Section: Minority Carrier Blocking Barriersmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Carrier transport in unipolar barrier infrared detectors

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…We refer interested readers to a similar analysis provided for a CBIRD structure with a p-type T2SL absorber. 12 …”

Section: Minority Carrier Extraction In N-type Unipolar Barrier Inframentioning

confidence: 97%

“…However, an imperfect barrier would also block minority carriers, resulting in higher than expected turn-on bias, as has been observed experimentally for both MWIR and LWIR devices. 10,12,21 Minority carrier blocking can be caused by: 1 barrier doping, and/or 2 unintended band offset between the barrier and the absorber.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors

Ting

Soibel

Höglund

et al. 2015

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

We have examined, theoretically, minority carrier collection in unipolar barrier infrared photodetectors. In barrier infrared detectors, for example the nBn, the unipolar barrier should block only majority carriers and allow unimpeded flow of minority carriers. However, an imperfect barrier would also block minority carriers, resulting in higher than expected turn-on bias. Minority carrier blocking can be caused by barrier doping or unintended band offset between the barrier and the absorber. The distinct manner in which these two mechanisms affect device performance were investigated. We found that introduction of an appropriate amount of barrier doping can reduce depletion dark current without increasing turn-on bias. We examined the effects of band structure on conductivity effective masses when the n-type absorber was a type-II superlattice (T2SL). We showed that for a long-wavelength infrared InAs/GaSb T2SL the vertical conductivity hole effective mass can be much smaller than that predicted by the simple band-edge effect mass picture, implying that the vertical hole mobility estimated from the band-edge effective mass can be unduly pessimistic.

show abstract

“…A common component to a majority of the device architectures is a wide gap ''unipolar'' barrier layer to block majority charge carriers [1][2][3][4][5][6][7][8], as seen in the device structure illustrated in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%