Experimental analysis of the switching behavior of an IGBT using a three-stage gate driver

Experimental Investigation on the Transient Switching Behavior of SiC MOSFETs Using a Stage-Wise Gate Driver

“…The influence on the switching behavior is accomplished by changing the value of the gate resistance during the switching action. The presented topology already led to good results using silicon IGBTs as shown in [15]. In comparison to a switching event using an IGBT, the fall and rise times of voltage and current of a SiC device are at least a decade faster.…”

“…In comparison to a switching event using an IGBT, the fall and rise times of voltage and current of a SiC device are at least a decade faster. This means, that if the switching event of an IGBT lasts for 100 ns (e.g., see [15], Fig. 11), it will last for less than 10 ns when using a SiC device.…”

“…11), it will last for less than 10 ns when using a SiC device. The gate driver, which is presented in [15], has a minimum time resolution of 10 ns due to the limited clock speed of the field-programmable gate array (FPGA). A timing of less than 1 ns is required to be able to influence the switching behavior of SiC devices.…”

“…A more detailed description of the switching loss extraction algorithm is given in [15]. The resulting switching losses using the reference driver with various gate resistances are shown in Fig.…”

“…A similar approach as shown in [15], [30] is followed to influence the switching behavior. The influence on the switching behavior for two-and three-stage operation is shown for the turn-on as well as the turn-off event.…”