1991
DOI: 10.1016/0022-0248(91)90125-o
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Experimental and theoretical study of InP homoepitaxy by chemical vapour deposition from gaseous indium chloride and hydrogen diluted phosphine

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Cited by 16 publications
(3 citation statements)
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“…The control of the extraneous deposit was studied versus the HCl added in the main nitrogen flow at constant total flow, noted HCl add , to decrease the supersaturation in the mixing zone. This method had been very effective for growing InP [4], GaInAs [5,6] or GaAs [1,7]. In order to have supersaturation high enough to obtain growth, the HCl flow on the liquid gallium is fixed to 30 sccm mixed with 73 sccm of …”
Section: Resultsmentioning
confidence: 99%
“…The control of the extraneous deposit was studied versus the HCl added in the main nitrogen flow at constant total flow, noted HCl add , to decrease the supersaturation in the mixing zone. This method had been very effective for growing InP [4], GaInAs [5,6] or GaAs [1,7]. In order to have supersaturation high enough to obtain growth, the HCl flow on the liquid gallium is fixed to 30 sccm mixed with 73 sccm of …”
Section: Resultsmentioning
confidence: 99%
“…For the undoped InP growth, Chaput et al suggested a mechanism with P-In-Cl as an intermediate component on the surface. 8 The Cl removal is then the limiting step. We add to this mechanism the Cp adsorption.…”
Section: Resultsmentioning
confidence: 99%
“…'° phosphine is adsorbed on free sites and forms either PH* (when PH, is in 8 = in S + 4 in T -40.2 + (52388.26/fl [19] diluted with hydrogen) or Pt (when PH, is pure). However, in K = in S + 4 in T -38 9 + (45802 01/fl [20] authors consider that both PH and P, are in gaseous phase 8…”
mentioning
confidence: 99%