Experimental and theoretical study of electrode effects in HfO&lt;inf&gt;2&lt;/inf&gt; based RRAM

Cagli, C.; Buckley, J.; Jousseaume, V.; Cabout, T.; Salaün, A.; Grampeix, H.; Nodin, J. F.; Feldis, H.; Persico, A.; Cluzel, J.; Lorenzi, Paolo; Massari, Luca; Rao, Rosario; Irrera, Fernanda; Aussenac, F.; Carabasse, C.; Coue, M.; Calka, P.; Martínez, E.; Perniola, L.; Blaise, Ph.; Fang, Zheng; Yu, Yang; Ghibaudo, G.; Deleruyelle, Damien; Bocquet, Marc; Müller, Christophe; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; Reimbold, G.; Salvo, B. De

doi:10.1109/iedm.2011.6131634

Cited by 72 publications

(58 citation statements)

References 3 publications

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“…In this study, the memory elements consisted in a Ti/HfO 2 /TiN stack with a hafnium oxide thickness of 10 nm. The description of the cell manufacture is presented in [21]. Using the set parameters given in Table 1, the present model shows an excellent agreement with experimental data for both set and reset operations.…”

Section: Model Validationsupporting

confidence: 63%

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Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Bocquet

Aziza

Zhao

et al. 2014

JLPEA

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Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. J. Low PowerElectron. Appl. 2014, 4 2

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Section: Model Validationsupporting

confidence: 63%

“…The compact model was calibrated on recent electrical data measured on HfO 2 -based OxRAM devices [21]. To validate the proposed theoritical approach, the model was confronted to quasi-static and dynamic experimental data extracted from the literature.…”

Section: Model Validationmentioning

confidence: 99%

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Bocquet

Aziza

Zhao

et al. 2014

JLPEA

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“…In order to accelerate the process development cycle it is imperative that automated testing routines are developed, such as the ones shown in [10] (generalised marching test assessing device switchability under given biasing conditions) and [11], [12] (tests for finding switching voltages for devices exhibiting abrupt switching). In this work we report on a novel testing routine that is capable of automatically extracting sets of biasing conditions suitable for operating RRAM arrays either as binary or as multi-level memory cells; a biasing parameter optimiser.…”

Section: Introductionmentioning

confidence: 99%

An RRAM Biasing Parameter Optimizer

Serb

Khiat

Prodromakis

2015

IEEE Trans. Electron Devices

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Abstract-Research on memory devices is a highly active field and many new technologies are being constantly developed. However, characterising them and understanding how to bias for optimal performance is becoming an increasingly tight bottleneck. Here we propose a novel technique for extracting biasing parameters conducive to desirable switching behaviour in a highly automated manner, thereby shortening process development cycles. The principle of operation is based on first: applying variable amplitude, pulse-mode stimulation on a test device in order to induce switching multiple times, next: collecting data on how pulsing parameters affect the device's resistive state and finally: choosing the most suitable biasing parameters for the application at hand. The utility of the proposed technique is validated on T iOx-based prototypes, where we demonstrate the successful extraction of biasing parameters that allow operation of our devices both as multi-state and binary resistive switches.

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“…Other papers have also investigated the role of oxygen ions within the insulator materials, varying the amount of oxygen that is input into the chamber during deposition [6][7][8]. It has been seen that when oxygen vacancies are increased, the switching properties improve [5,9,10].…”

Section: Introductionmentioning

confidence: 99%

The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

Morgan

Huang

Pearce

et al. 2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

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Abstract-TiN/HfOx/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material characterization shows the structure of the hafnium oxide is converted from cubic to monoclinic for 400 degrees C. Elemental analysis shows that the temperature affects the stoichiometric behavior of hafnium oxide, with a higher oxygen concentration at 350 degrees C and above. The switching behavior differs significantly for each device whereby the 400 degrees C device shows no successful switching, due to the change in structure to monoclinic. The two lower temperatures both show successful bipolar switching which set at negative voltages. The 300 degrees C device has a higher Roff/Ron of 13.9, with superior endurance. The 350 degrees C device has a lower Roff/Ron of 5.5 and shows deterioration in switching properties as the number of cycles are increased. At 300 degrees C, the oxygen hafnium ratio is at a minimum; hence the greatest amount of oxygen vacancies are present, which results in improved switching characteristics. This supports the theory that oxygen vacancies play a key role in the switching mechanism for metal oxide RRAM devices.

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Experimental and theoretical study of electrode effects in HfO<inf>2</inf> based RRAM

Cited by 72 publications

References 3 publications

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

An RRAM Biasing Parameter Optimizer

The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

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