Experimental characterization of electron-hole generation in silicon carbide

Wang, Y.; Cooper, James A.; Melloch, M. R.; Sheppard, S.T.; Palmour, John W.; Lipkin, Lori A.

doi:10.1007/bf02666656

Cited by 20 publications

(16 citation statements)

References 8 publications

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“…This deep depletion feature with no inversion capacitance characteristics is typical of wide-gap semiconductor MIS structures such as SiO 2 /SiC 10,11 and AlN/SiC, 12 because the generation rate of the minority carriers ͑holes͒ is extremely low at room tem-perature. In the case of SiC, Wang and co-workers 13 reported in fact that it could take years to tens of years to reach thermal equilibrium in the inversion region at a given bias voltage at room temperature. However, such deep depletion behavior has not been observed so far in plasma-enhanced chemical vapor deposition ͑PECVD͒ prepared SiO 2 /n-GaN MIS structures.…”

Section: Methodsmentioning

confidence: 99%

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Hashizume

Alekseev

Pavlidis

et al. 2000

Journal of Applied Physics

112

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Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C 2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density D it of 1 ϫ10 11 cm Ϫ2 eV Ϫ1 or less around the energy position of E c Ϫ0.8 eV was demonstrated, in agreement with an average D it value estimated from photoassisted C-V characteristics.

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Section: Methodsmentioning

confidence: 99%

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Hashizume

Alekseev

Pavlidis

et al. 2000

Journal of Applied Physics

112

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“…34,35 Because the generation of minority carriers is slow at room temperature, it might take tens of years to achieve inversion in C-V measurement at room temperature as proposed by Wang et al 36 on the SiC MOS structure. The leakage current density was compared at a positive gate bias of +4V (Table II).…”

Section: C-v and I-v Measurements For Al 2 O 3 On Ganmentioning

confidence: 99%

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

Wei

Hossain

Briggs

et al. 2014

ECS J. Solid State Sci. Technol.

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Nitrogen-polar gallium nitride offers several advantages over Ga-polar GaN for high frequency-high power electronic devices, but its processing has not been fully developed. Here we report on a systematic study of the effect of surface pretreatments on N-polar GaN for metal oxide semiconductor capacitors (MOSCAPs). Bulk n-type GaN (0001) substrates were prepared with a variety of treatments including: HF; HCl; base-piranha; H 2 plasma; and no pretreatment for comparison. Then 14nm thick Al 2 O 3 layers were deposited by atomic layer deposition (ALD). Both the original surfaces of GaN and ALD films were characterized by atomic force microscopy (AFM). MOSCAPs were fabricated and characterized by capacitance-voltage (C-V) and current voltage (I-V) measurements. The surface morphology and electrical performance was greatly affected by the pretreatments due to the reactive nature of N-polar GaN. The MOSCAP fabricated on GaN as-received with no additional preparation had the best performance including the smallest hysteresis (0.03V), lowest leakage current density (2.09 × 10 −8 A/cm 2 at +4V) and total trap density (2.47 × 10 10 cm −2 eV −1 ). This was correlated to the smoothest surface morphology (0.23 nm). The wide bandgap semiconductor gallium nitride (GaN) is of great interest not only for optoelectronic devices such as blue LEDs, 1 laser diodes, 2 and UV detectors, but also for highly efficient electronic devices operating at high frequency, temperature and power. After years of development, Ga-polar GaN based high electron mobility transistors (HEMTs) have been demonstrated with excellent performance and high RF output power.3,4 Increasing the maximum frequency by scaling down the GaN HEMT dimensions to reduce electron transit time, establishing control of the contact resistance and capacitive elements are critically important to prevent device delay times and to achieve the best possible device performance.5 Nitrogen-polar GaN has potential advantages over Ga-polar GaN for high-frequency applications due to its low contact resistance and a natural back barrier to improve electron confinement.6-8 For example, an extremely low contact resistance of 23 -μm was reported by Mishra et al. 9 To date, most of the N-polar GaN HEMT devices employ structures with a Schottky barrier as the gate contact. 6,10,11 However, a metaloxide-semiconductor structure is preferred, as it provides a higher input impedance, larger gate voltage swings, and lower gate leakage currents. 12,13 Aluminum oxide (Al 2 O 3 ) is an excellent gate dielectric for IIInitride based devices due to its large bandgap (7∼9 eV), relatively high dielectric constant (∼9) and high thermal stability (up to 1000• C). 14-20 Precise control of this dielectric's thickness is necessary to maintain the aspect ratio between the gate length and the oxide thickness for good high frequency performance. Atomic layer deposition (ALD) offers excellent thickness control for the deposition of such dielectrics, 21 but the initial condition of the substrate surface is crucia...

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“…[12][13][14] Previously, a memory structure based on wide band gap material was fabricated and characterized using a SiC n-p-n structure. 15 This memory structure can achieve low programming voltage ( 10 V) due to the diode operation mechanism and long retention time (>100 years) due to the low thermal generation current. Compared with SiC, ZnO having a band gap of $3.2 eV can achieve extremely low thermal generation current, which can further enhance the retention performance of the nonvolatile memory.…”

mentioning

confidence: 99%

“…Compared with SiC, ZnO having a band gap of $3.2 eV can achieve extremely low thermal generation current, which can further enhance the retention performance of the nonvolatile memory. 15 ZnO is a direct band gap material which has low minority carrier lifetime (nanosecond), 16 and it will result in high programming speed. Furthermore, ZnO can also be synthesized with lower cost using low-temperature epitaxial growth, so it can reduce the cost for future memory devices.…”

mentioning

confidence: 99%

P-type behavior of Sb doped ZnO from p-n-p memory structure

Huang

Chu

et al. 2012

Applied Physics Letters

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Antimony (Sb) doped p-type ZnO was studied by using Sb-ZnO/ZnO/Sb-ZnO p-n-p structure. Secondary ion mass spectrometry result confirmed the formation of the structure. Rectifying current-voltage characteristics between Sb-ZnO and undoped ZnO layers were achieved, proving the p-n junction was formed. The p-type behavior from the p-n-p structure was studied by using the capacitance-voltage measurement and small signal model. The voltage operation led to the charging/discharging of the structure, showing nonvolatile memory effect. Very long retention time was achieved. This research suggests that p-type ZnO can be evaluated by a p-n-p structure, which could be promising for future nonvolatile memory applications.

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Experimental characterization of electron-hole generation in silicon carbide

Cited by 20 publications

References 8 publications

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

P-type behavior of Sb doped ZnO from p-n-p memory structure

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Experimental characterization of electron-hole generation in silicon carbide

Cited by 20 publications

References 8 publications

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al2O3

P-type behavior of Sb doped ZnO from p-n-p memory structure

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A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃