Experimental electrical characterization of high speed interconnects

Goldberg, S.; Steer, M.B.; Franzon, Paul D.; Kasten, J.S.

doi:10.1109/ectc.1991.163858

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…An alternative frequency-domain technique is often used [31]. -parameter measurements are made using a network analyzer from which the transmission-line characteristics are calculated.…”

Section: Measurement and Modeling Considerationsmentioning

confidence: 99%

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Electrical characteristics of interconnections for high-performance systems

Deutsch

1998

Proc. IEEE

151

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A review is presented of the electrical characteristics of highdensity, high-performance interconnections used in digital and communication applications. These interconnections behave as lossy transmission lines for the frequency range of interest. A brief theoretical explanation of the key properties of lossy, coupled transmission lines is given. A new short-pulse propagation technique used for characterizing a large category of wiring is described. A detailed description is made of each of the major interconnect types encountered, namely, shielded cables, printed circuit boards, ceramic carriers, thin-film wiring, and on-chip wiring. Representative examples are given in each case to highlight the key performance-limiting parameters. The modeling and measurement techniques used are explained and examples are given. Future technological directions and their effect on performance are discussed.

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“…An alternative frequency-domain technique is often used [31]. -parameter measurements are made using a network analyzer from which the transmission-line characteristics are calculated.…”

Section: Measurement and Modeling Considerationsmentioning

confidence: 99%

“…Manuscript received May 10, 1997; revised July 31,1997. The author is with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: deutsch@watson.ibm.com).…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of interconnections for high-performance systems

Deutsch

1998

Proc. IEEE

151

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“…a NH, -or NH, M,-plasma treatment, has been highlighted also by Lloyd et al [2,5,6] . The key point here is to remove a Cu-oxide film that has possibly formed on the copper surface before the cap-layer deposition [7] .…”

Section: Introductionmentioning

confidence: 99%

The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu Interconnects

Cao¹,

Xing

Xu³

et al. 2011

ECS Trans.

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The influence of the SiN cap-layer deposition process including different pre-clean treatments on the voltage breakdown (VBD) and electromigration (EM) behavior of copper dual damascene metallization has been studied. A remarkable improvement for voltage breakdown and electromigration were revealed depending primarily on the pre-clean treatment before cap-layer deposition rather than the deposition process itself.On one hand an "aggressive" pre-clean treatment yields improved Cu/SiN-interface properties with higher electromigration failure times and activation energies (1.23 ... 1.27eV). On the other hand these pre-clean treatments were found to induce voltage breakdown failures because of the redundant Cu/Cu 2+ or Copper Silicide defects induced in the Dielectric (FSG)/SiN-interface during the plasma pre-clean treatment. The micro damage on surface and copper Silicide was found to increase with the pre-clean intensity. In contrast, No VBD risk is related to "less aggressive" pre-clean treatments.The results indicate the need to adjust the SIN cap-layer process parameters with respect to both VBD&EM performance to meet the overall reliability requirements. INTRODUCTIONThe interface between the copper and the capping layer is to be the dominant diffusion pathway in copper dual damascene interconnects. Therefore, the properties of this particular interface play a key role for wear-out mechanisms such as electro-migration and voltage breakdown, limiting the life time of complex integrated copper interconnect systems.SIN-and Sic-based films are widely used as capping materials for copper interconnects. It has been published in several studies that the EM life time depends on the adhesion behavior, i.e. the sticking coefficient between cap-layer and copper surface. Good adhesion and hence large EM life times are enabled by a tightly bonded interface which suppresses the migration along this pathway. In contrast, a poorly adhering interface would correspond with enhanced diffusion and lower EM life times

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