In this work, Co ions were implanted onto thermally oxidised SiO 2 layers on silicon substrates. The implantation energy was 50 keV and the doses were 1, 3, 5 and 7×10 16 Co + /cm 2 . The field emission (FE) properties of these layers were studied and correlated with results from atomic force microscopy and transmission electron microscopy measurements. Except for the lowest dose sample, crystallised Co nanoclusters, with size ranging from 1.8 to 5.7 nm, are observed in these Co implanted layers. The higher dose samples exhibit excellent FE properties and give an emission current of 1 nA at electric fields as low as 5 V/µm, for a dose of 5×10 16 Co + /cm 2 compared with 120 V/µm for the lowest dose samples. It is clearly demonstrated that the excellent FE properties of these layers are attributed to the formation of Co nanoclusters as the electrical inhomogeneity local field enhancement effect. Finally, repeatable staircase current-field (I-F) characteristics were observed in FE measurements of these higher dose samples as compared to conventional Fowler-Nordheim type I-F characteristics in lowest dose sample. It is possibly attributed to Coulomb blockade effect arising from the isolated metal quantum dots.2